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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10, Pages 877–881
DOI: https://doi.org/10.21883/FTP.2021.10.51437.36 (Mi phts4956) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux

D. V. Dmitrieva, D. A. Kolosovskyab, E. V. Fedosenkoa, A. I. Toropova, K. S. Zhuravlevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (447 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2021.10.51437.36
Abstract: Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP$_{1-x}$As$_{x}$ layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480$^\circ$C and, reaches 41% at the temperature 540$^\circ$C. The annealing time influences the degree of substitution only slightly.
Keywords: indium phosphide, arsenic, annealing, substitution, diffraction.
Funding agency Grant number
Russian Foundation for Basic Research 20-42-540009
The study was supported by the Russian Foundation for Basic Research and the government of the Novosibirsk region, project no. 20-42-540009.
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 11, Pages 823–837
DOI: https://doi.org/10.1134/S1063782621100080
Document Type: Article
Language: Russian
Citation: D. V. Dmitriev, D. A. Kolosovsky, E. V. Fedosenko, A. I. Toropov, K. S. Zhuravlev, “Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 877–881; Semiconductors, 55:11 (2021), 823–837
Citation in format AMSBIB
\Bibitem{DmiKolFed21}
\by D.~V.~Dmitriev, D.~A.~Kolosovsky, E.~V.~Fedosenko, A.~I.~Toropov, K.~S.~Zhuravlev
\paper Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 10
\pages 877--881
\mathnet{http://mi.mathnet.ru/phts4956}
\crossref{https://doi.org/10.21883/FTP.2021.10.51437.36}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 11
\pages 823--837
\crossref{https://doi.org/10.1134/S1063782621100080}
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