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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 8, Pages 467–471
(Mi jetpl2538)
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This article is cited in 23 scientific papers (total in 23 papers)
CONDENSED MATTER
Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures
D. V. Dmitrieva, I. S. Stryginab, A. A. Bykovca, S. Dietrichd, S. A. Vitkalovd a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
d City College of the City University of New York, Physics Department
Abstract:
Low-temperature dependences of the transport relaxation time ($\tau_{tr}$) and quantum lifetime ($\tau_{q}$) on the density of the two-dimensional electron gas ($n_{e}$) in GaAs quantum wells with AlAs/GaAs lateral superlattice barriers have been studied. An exponential increase in the quantum lifetime with increasing electron density has been observed. It has been shown that the sharp increase in the quantum lifetime correlates with the appearance of X electrons in the AlAs/GaAs lateral superlattice barriers. It has been established that the ratio of the transport relaxation time to the quantum lifetime in the studied structures nonmonotonically depends on the density: the ratio $\tau_{tr}/\tau_{q}$ first increases linearly with $n_e$ and then decreases. This behavior is not described by the existing theories.
Received: 15.03.2012
Citation:
D. V. Dmitriev, I. S. Strygin, A. A. Bykov, S. Dietrich, S. A. Vitkalov, “Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 467–471; JETP Letters, 95:8 (2012), 420–423
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https://www.mathnet.ru/eng/jetpl2538 https://www.mathnet.ru/eng/jetpl/v95/i8/p467
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Abstract page: | 333 | Full-text PDF : | 75 | References: | 40 | First page: | 8 |
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