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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Dementev, E. V. Dementevā, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of thermally oxidized tungsten”, Fizika Tverdogo Tela, 63:8 (2021), 1166–1171   ; Phys. Solid State, 63 (2021), 1153–1158 |
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2020 |
| 2. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of an ultrathin molybdenum oxide film”, Fizika Tverdogo Tela, 62:10 (2020), 1618–1626 ; Phys. Solid State, 62:10 (2020), 1787–1795 |
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| 3. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Gold nanoparticles adsorbed on tungsten: effect of sodium atom deposition and heating”, Fizika Tverdogo Tela, 62:8 (2020), 1171–1178 ; Phys. Solid State, 62:8 (2020), 1317–1324 |
| 4. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxide oxidized at different pressures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1395 ; Semiconductors, 54:12 (2020), 1698–1701 |
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| 5. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503 ; Semiconductors, 54:5 (2020), 596–608 |
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| 6. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, S. A. Kukushkin, “Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 346–354 ; Semiconductors, 54:4 (2020), 417–425 |
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2019 |
| 7. |
G. V. Benemanskaya, S. A. Kukushkin, S. N. Timoshnev, “Aromatic-like carbon nanostructures created on the vicinal SiC surfaces”, Fizika Tverdogo Tela, 61:12 (2019), 2436 ; Phys. Solid State, 61:12 (2019), 2455–2458 |
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| 8. |
S. N. Timoshnev, A. M. Mizerov, G. V. Benemanskaya, S. A. Kukushkin, A. D. Bouravlev, “Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy”, Fizika Tverdogo Tela, 61:12 (2019), 2294–2297 ; Phys. Solid State, 61:12 (2019), 2282–2285 |
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| 9. |
A. M. Mizerov, S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, S. N. Timoshnev, K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. D. Bouravlev, “Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 61:12 (2019), 2289–2293 ; Phys. Solid State, 61:12 (2019), 2277–2281 |
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| 10. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxidized in air”, Fizika Tverdogo Tela, 61:11 (2019), 2024–2029 ; Phys. Solid State, 61:11 (2019), 1993–1998 |
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| 11. |
A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, M. S. Sobolev, K. Yu. Shubin, T. N. Berezovskaya, D. V. Mokhov, V. V. Lundin, A. E. Nikolaev, A. D. Bouravlev, “On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1212–1217 ; Semiconductors, 53:9 (2019), 1187–1191 |
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| 12. |
S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev, M. S. Sobolev, “Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 190–198 ; Semiconductors, 53:2 (2019), 180–187 |
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| 13. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, A. V. Osipov, S. N. Timoshnev, “A new type of carbon nanostructure on a vicinal SiŅ(111)-8$^\circ$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 17–20 ; Tech. Phys. Lett., 45:3 (2019), 201–204 |
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2018 |
| 14. |
A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev, “Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1425–1429 ; Semiconductors, 52:12 (2018), 1529–1533 |
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| 15. |
Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina, “Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 524 ; Semiconductors, 52:5 (2018), 660–663 |
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| 16. |
G. V. Benemanskaya, M. N. Lapushkin, D. E. Marchenko, S. N. Timoshnev, “The electronic structure of the Cs/$n$-GaN(0001) nano-interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 50–58 ; Tech. Phys. Lett., 44:3 (2018), 247–250 |
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2017 |
| 17. |
D. V. Mokhov, T. N. Berezovskaya, A. G. Kuz'menkov, N. A. Maleev, S. N. Timoshnev, V. M. Ustinov, “Precision calibration of the silicon doping level in gallium arsenide epitaxial layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 87–94 ; Tech. Phys. Lett., 43:10 (2017), 909–911 |
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2016 |
| 18. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy, S. N. Timoshnev, “Induced surface states of the ultrathin Âā/3$C$-SiC(111) interface”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 465–469 ; Semiconductors, 50:4 (2016), 457–461 |
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| 19. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 51–57 ; Tech. Phys. Lett., 42:12 (2016), 1145–1148 |
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2010 |
| 20. |
G. V. Benemanskaya, V. N. Zhmerik, M. N. Lapushkin, S. N. Timoshnev, “Electronic structure of a Ba/<i>n</i>-AlGaN(0001) interface and the formation of a degenerate 2D electron gas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:12 (2010), 739–743 ; JETP Letters, 91:12 (2010), 670–674   |
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2008 |
| 21. |
G. V. Benemanskaya, V. S. Vikhnin, S. N. Timoshnev, “Self-organization of nanostructures on the <i>n</i> -GaN(0001) surface in the Cs and Ba adsorption”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:2 (2008), 119–123 ; JETP Letters, 87:2 (2008), 111–114 |
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