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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 524 (Mi phts5850)  
This article is cited in 4 scientific papers (total in 4 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy

Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina

St. Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
Full-text PDF (27 kB) Citations (4)
Abstract: The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 6.9789.2017/BCh
Skolkovo Institute of Science and Technology 3663-MRA
The growth experiments were supported financially by the Ministry of Education and Science of the Russian Federation No 6.9789.2017/BCh. The studies of morphological and electrical properties of the samples were supported financially in the framework of the implementation of the “Investigation of the physical principles of plasma-assisted molecular beam epitaxy of wide-bandgap group three nitride semiconductors on lattice-mismatched silicon substrates” project under the Master Research Agreement between Skoltech and SPbAU RAS No 3663-MRA.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 660–663
DOI: https://doi.org/10.1134/S1063782618050342
Bibliographic databases:
Document Type: Article
Language: English
Citation: Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina, “Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 524; Semiconductors, 52:5 (2018), 660–663
Citation in format AMSBIB
\Bibitem{TimMizSob18}
\by Sergei~Timoshnev, Andrey~Mizerov, Maxim~Sobolev, Ekaterina~Nikitina
\paper Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 524
\mathnet{http://mi.mathnet.ru/phts5850}
\elib{https://elibrary.ru/item.asp?id=32740388}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 660--663
\crossref{https://doi.org/10.1134/S1063782618050342}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p524
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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