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This article is cited in 17 scientific papers (total in 17 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.
Keywords:
High-temperature Nitriding, Optimal Initial Conditions, RHEED Pattern, Reflection High-energy Electron Diffraction (RHEED), Single Growth Process.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev, “Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1425–1429; Semiconductors, 52:12 (2018), 1529–1533
Linking options:
https://www.mathnet.ru/eng/phts5654 https://www.mathnet.ru/eng/phts/v52/i12/p1425
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