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This article is cited in 1 scientific paper (total in 1 paper)
Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
D. V. Mokhova, T. N. Berezovskayaab, A. G. Kuz'menkovbc, N. A. Maleevbd, S. N. Timoshneva, V. M. Ustinovbce a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d Saint Petersburg Electrotechnical University "LETI"
e Peter the Great St. Petersburg Polytechnic University
Abstract:
An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon-source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.
Received: 22.06.2017
Citation:
D. V. Mokhov, T. N. Berezovskaya, A. G. Kuz'menkov, N. A. Maleev, S. N. Timoshnev, V. M. Ustinov, “Precision calibration of the silicon doping level in gallium arsenide epitaxial layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 87–94; Tech. Phys. Lett., 43:10 (2017), 909–911
Linking options:
https://www.mathnet.ru/eng/pjtf6113 https://www.mathnet.ru/eng/pjtf/v43/i19/p87
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