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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. N. Reznik, N. V. Vostokov, N. K. Vdovicheva, V. I. Shashkin, “Microwave volt–impedance spectroscopy of semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1944–1950   ; Tech. Phys., 65:11 (2020), 1859–1865 |
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| 2. |
A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin, “Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867 ; Semiconductors, 54:9 (2020), 1056–1058 |
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| 3. |
P. A. Yunin, A. I. Okhapkin, M. N. Drozdov, S. A. Korolev, E. A. Arkhipova, S. A. Kraev, Yu. N. Drozdov, V. I. Shashkin, D. B. Radishev, “Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 855–858 ; Semiconductors, 54:9 (2020), 1047–1050 |
| 4. |
M. N. Drozdov, E. A. Arkhipova, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, A. E. Parafin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 34–38 ; Tech. Phys. Lett., 46:6 (2020), 551–555 |
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2019 |
| 5. |
M. N. Drozdov, E. V. Demidov, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, E. A. Arkhipova, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1923–1932 ; Tech. Phys., 64:12 (2019), 1827–1836 |
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| 6. |
E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, S. A. Kraev, V. I. Shashkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Ohmic contacts to CVD diamond with boron-doped $\delta$ layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1386–1390 ; Semiconductors, 53:10 (2019), 1348–1352 |
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| 7. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314 ; Semiconductors, 53:10 (2019), 1279–1281 |
| 8. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin, “Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232 ; Semiconductors, 53:9 (2019), 1203–1206 |
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| 9. |
P. V. Volkov, N. V. Vostokov, A. V. Goryunov, L. M. Kukin, V. Parshin, E. A. Serov, V. I. Shashkin, “Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 56–58 ; Tech. Phys. Lett., 45:3 (2019), 239–241 |
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2018 |
| 10. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin, “Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1362–1365 ; Semiconductors, 52:11 (2018), 1473–1476 |
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| 11. |
P. A. Yunin, P. V. Volkov, Yu. N. Drozdov, A. V. Koliadin, S. A. Korolev, D. B. Radishev, E. A. Surovegina, V. I. Shashkin, “Study of the structural and morphological properties of HPHT diamond substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1321–1325 ; Semiconductors, 52:11 (2018), 1432–1436 |
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2017 |
| 12. |
S. Korolev, N. V. Vostokov, N. V. D'yakonova, V. I. Shashkin, “Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 746–753 ; Tech. Phys., 62:5 (2017), 765–772 |
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| 13. |
A. V. Murel, V. B. Shmagin, V. L. Kryukov, S. S. Strelchenko, E. A. Surovegina, V. I. Shashkin, “Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542 ; Semiconductors, 51:11 (2017), 1485–1489 |
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| 14. |
A. I. Okhapkin, S. Korolev, P. A. Yunin, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, V. I. Shashkin, “Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1503–1506 ; Semiconductors, 51:11 (2017), 1449–1452 |
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| 15. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, J. E. Batler, “Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron””, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151 ; Semiconductors, 51:8 (2017), 1106 |
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2016 |
| 16. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598 ; Semiconductors, 50:12 (2016), 1569–1573 |
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| 17. |
V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin, “Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462 ; Semiconductors, 50:11 (2016), 1439–1442 |
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2009 |
| 18. |
P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. Pol, “Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 80–83 ; JETP Letters, 89:2 (2009), 73–75   |
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2003 |
| 19. |
A. A. Andronov, M. N. Drozdov, D. I. Zinchenko, A. A. Marmalyuk, I. M. Nefedov, Yu. N. Nozdrin, A. A. Padalitsa, A. V. Sosnin, A. V. Ustinov, V. I. Shashkin, “Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator”, UFN, 173:7 (2003), 780–783 ; Phys. Usp., 46:7 (2003), 755–758 |
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1984 |
| 20. |
A. A. Ignatov, V. I. Shashkin, “Diffusion Coefficient of Hot Carriers, Spectrum of Space-Charge Waves and Characteristic Frequencies of Instability
in Semiconductor Superlattices”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 721–724 |
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2018 |
| 21. |
A. V. Gaponov, G. G. Denisov, A. G. Zabrodskii, A. G. Litvak, E. A. Mareev, N. N. Salashchenko, A. M. Sergeev, R. A. Suris, E. A. Khazanov, V. L. Vaks, V. I. Gavrilenko, V. V. Kurin, A. A. Fraerman, N. I. Chkhalo, V. I. Shashkin, “Çàõàðèé Ôèøåëåâè÷ Êðàñèëüíèê (ê 70-ëåòèþ ñî äíÿ ðîæäåíèÿ)”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 285–286 |
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