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This article is cited in 1 scientific paper (total in 1 paper)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
A. V. Murela, V. B. Shmagina, V. L. Kryukovb, S. S. Strelchenkob, E. A. Suroveginaa, V. I. Shashkina a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b "MeGa Epitech", Kaluga
Abstract:
Three deep acceptor levels with activation energies of $\sim$0.7, $\sim$0.41, and $\sim$0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spectroscopy and deep-level transient spectroscopy). The first two levels are known as HL2 and HL5 and are related to the features of GaAs-layer growth by liquid-phase epitaxy. They are effective recombination centers determining reverse currents in $p$–$i$–$n$ diodes, which is confirmed by studying the temperature dependences of reverse currents. The level with the energy $E_v$ + 0.16 eV can be related to the two-charge acceptor level of the inherent antisite defect in GaAs, which also determines the doping concentration of structures in the singly charged state.
Received: 27.03.2017 Accepted: 12.05.2017
Citation:
A. V. Murel, V. B. Shmagin, V. L. Kryukov, S. S. Strelchenko, E. A. Surovegina, V. I. Shashkin, “Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542; Semiconductors, 51:11 (2017), 1485–1489
Linking options:
https://www.mathnet.ru/eng/phts6004 https://www.mathnet.ru/eng/phts/v51/i11/p1538
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