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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1538–1542
DOI: https://doi.org/10.21883/FTP.2017.11.45107.21
(Mi phts6004)
 

This article is cited in 1 scientific paper (total in 1 paper)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

A. V. Murela, V. B. Shmagina, V. L. Kryukovb, S. S. Strelchenkob, E. A. Suroveginaa, V. I. Shashkina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b "MeGa Epitech", Kaluga
Full-text PDF (200 kB) Citations (1)
Abstract: Three deep acceptor levels with activation energies of $\sim$0.7, $\sim$0.41, and $\sim$0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spectroscopy and deep-level transient spectroscopy). The first two levels are known as HL2 and HL5 and are related to the features of GaAs-layer growth by liquid-phase epitaxy. They are effective recombination centers determining reverse currents in $p$$i$$n$ diodes, which is confirmed by studying the temperature dependences of reverse currents. The level with the energy $E_v$ + 0.16 eV can be related to the two-charge acceptor level of the inherent antisite defect in GaAs, which also determines the doping concentration of structures in the singly charged state.
Received: 27.03.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1485–1489
DOI: https://doi.org/10.1134/S1063782617110197
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Murel, V. B. Shmagin, V. L. Kryukov, S. S. Strelchenko, E. A. Surovegina, V. I. Shashkin, “Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542; Semiconductors, 51:11 (2017), 1485–1489
Citation in format AMSBIB
\Bibitem{MurShmKry17}
\by A.~V.~Murel, V.~B.~Shmagin, V.~L.~Kryukov, S.~S.~Strelchenko, E.~A.~Surovegina, V.~I.~Shashkin
\paper Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1538--1542
\mathnet{http://mi.mathnet.ru/phts6004}
\crossref{https://doi.org/10.21883/FTP.2017.11.45107.21}
\elib{https://elibrary.ru/item.asp?id=30546398}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1485--1489
\crossref{https://doi.org/10.1134/S1063782617110197}
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  • https://www.mathnet.ru/eng/phts/v51/i11/p1538
  • This publication is cited in the following 1 articles:
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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