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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1595–1598
(Mi phts6276)
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This article is cited in 2 scientific papers (total in 2 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
E. A. Suroveginaa, E. V. Demidova, M. N. Drozdova, A. V. Murela, O. I. Khrykina, V. I. Shashkina, M. A. Lobaevb, A. M. Gorbachevb, A. L. Vikharevb, S. A. Bogdanovb, V. A. Isaevb, A. B. Muchnikovb, V. V. Chernovb, D. B. Radishevb, D. E. Batlerb a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Abstract:
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 $\times$ 10$^{17}$ to $\sim$10$^{20}$ at cm$^{-3}$ and of $\delta$ doping to the surface concentration (0.3–5) $\times$ 10$^{13}$ at cm$^{-3}$ are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598; Semiconductors, 50:12 (2016), 1569–1573
Linking options:
https://www.mathnet.ru/eng/phts6276 https://www.mathnet.ru/eng/phts/v50/i12/p1595
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