Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1229–1232
DOI: https://doi.org/10.21883/FTP.2019.09.48129.12 (Mi phts5407) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond

A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (258 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.09.48129.12
Abstract: The plasma-chemical deposition of diamond-like carbon (DLC) films onto heavily boron-doped single-crystal $p$-type diamond (the concentration $\sim$10$^{20}$ cm$^{-3}$) in CH$_4$ + Ar plasma is conducted. The deposition rate is 7 nm min$^{-1}$. The elemental composition and properties of the films are studied in detail. It is found that the films are enriched with hydrogen, possess a density of 2.4 g cm$^{-3}$, and exhibit an ultrasmooth surface (with a roughness of 0.4 $\pm$ 0.2 nm).
Keywords: diamond-like carbon, plasma-chemical deposition, single-crystal diamond.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation МК-3450.2019.2
Russian Foundation for Basic Research 18-02-00565
The part of the study concerned with the deposition and analysis of DLC layers was supported by the President of the Russian Federation, grant for support of young candidates of sciences no. MK-3450.2019.2. The part of the study concerned with the development of the SIMS method was supported by the Russian Foundation for Basic Research, project no. 18-02-00565.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1203–1206
DOI: https://doi.org/10.1134/S1063782619090136
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin, “Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232; Semiconductors, 53:9 (2019), 1203–1206
Citation in format AMSBIB
\Bibitem{OkhYunDro19}
\by A.~I.~Okhapkin, P.~A.~Yunin, M.~N.~Drozdov, S.~Korolev, S.~A.~Kraev, E.~A.~Arkhipova, E.~V.~Skorokhodov, P.~A.~Bushuikin, V.~I.~Shashkin
\paper Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1229--1232
\mathnet{http://mi.mathnet.ru/phts5407}
\crossref{https://doi.org/10.21883/FTP.2019.09.48129.12}
\elib{https://elibrary.ru/item.asp?id=41129868}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1203--1206
\crossref{https://doi.org/10.1134/S1063782619090136}
Linking options:
  • https://www.mathnet.ru/eng/phts5407
  • https://www.mathnet.ru/eng/phts/v53/i9/p1229
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:65
    Full-text PDF :45
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024