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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 865–867
DOI: https://doi.org/10.21883/FTP.2020.09.49822.14
(Mi phts5161)
 

This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate

A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract: The fabrication process of ohmic contacts to a diamond-like carbon (DLC) layer is described with the sequential deposition of a Au/Mo/Ti metallic layer onto it. The contacts have good mechanical and adhesion properties. Their specific contact resistance is varied from 1.4 $\times$ 10$^-4$ to 6.4 $\times$ 10$^{-5}$ $\Omega$ cm$^2$ depending on the DLC layer thickness. The temperature dependence of the layer film resistance is investigated. It is shown that thin DLC layers provide better characteristics of an ohmic contact due to their more uniform graphitization during thermal annealing.
Keywords: diamond-like carbon, ohmic contacts, plasma-chemical deposition, monocrystalline diamond, thermal annealing.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation МК-3450.2019.2
Russian Foundation for Basic Research 18-02-00565
In this work, we used equipment of the Joint Use Common Research Center “Physics and Technology of Micro- and Nanostructures”. Deposition and investigation of the DLC layers is supported by the Presidential Grant of the Russian Federation for Young Candidates of Science no. MK-3450.2019.2.
In the part of the development of the SIMS procedure, this study was supported by the Russian Foundation for Basic Research, project no. 18-02-00565.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1056–1058
DOI: https://doi.org/10.1134/S1063782620090213
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin, “Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867; Semiconductors, 54:9 (2020), 1056–1058
Citation in format AMSBIB
\Bibitem{OkhYunArk20}
\by A.~I.~Okhapkin, P.~A.~Yunin, E.~A.~Arkhipova, S.~A.~Kraev, S.~A.~Korolev, M.~N.~Drozdov, V.~I.~Shashkin
\paper Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 865--867
\mathnet{http://mi.mathnet.ru/phts5161}
\crossref{https://doi.org/10.21883/FTP.2020.09.49822.14}
\elib{https://elibrary.ru/item.asp?id=44154189}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1056--1058
\crossref{https://doi.org/10.1134/S1063782620090213}
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  • https://www.mathnet.ru/eng/phts/v54/i9/p865
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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