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This article is cited in 2 scientific papers (total in 2 papers)
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020
Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The fabrication process of ohmic contacts to a diamond-like carbon (DLC) layer is described with the sequential deposition of a Au/Mo/Ti metallic layer onto it. The contacts have good mechanical and adhesion properties. Their specific contact resistance is varied from 1.4 $\times$ 10$^-4$ to 6.4 $\times$ 10$^{-5}$ $\Omega$ cm$^2$ depending on the DLC layer thickness. The temperature dependence of the layer film resistance is investigated. It is shown that thin DLC layers provide better characteristics of an ohmic contact due to their more uniform graphitization during thermal annealing.
Keywords:
diamond-like carbon, ohmic contacts, plasma-chemical deposition, monocrystalline diamond, thermal annealing.
Received: 15.04.2020 Revised: 21.04.2020 Accepted: 21.04.2020
Citation:
A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin, “Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867; Semiconductors, 54:9 (2020), 1056–1058
Linking options:
https://www.mathnet.ru/eng/phts5161 https://www.mathnet.ru/eng/phts/v54/i9/p865
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