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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 5, Pages 56–58
DOI: https://doi.org/10.21883/PJTF.2019.05.47401.17613 (Mi pjtf5520) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range

P. V. Volkova, N. V. Vostokova, A. V. Goryunova, L. M. Kukinb, V. Parshinb, E. A. Serovb, V. I. Shashkina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Full-text PDF (93 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2019.05.47401.17613
Abstract: The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface $\delta$-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of $\sim$1000 V/W with NEP $\sim$10 pW/Hz$^{1/2}$ in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0035-2014-0205
Russian Foundation for Basic Research 18-42-520015 р_а
Received: 29.11.2018
Revised: 29.11.2018
Accepted: 13.12.2018
English version:
Technical Physics Letters, 2019, Volume 45, Issue 3, Pages 239–241
DOI: https://doi.org/10.1134/S1063785019030179
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Volkov, N. V. Vostokov, A. V. Goryunov, L. M. Kukin, V. Parshin, E. A. Serov, V. I. Shashkin, “Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 56–58; Tech. Phys. Lett., 45:3 (2019), 239–241
Citation in format AMSBIB
\Bibitem{VolVosGor19}
\by P.~V.~Volkov, N.~V.~Vostokov, A.~V.~Goryunov, L.~M.~Kukin, V.~Parshin, E.~A.~Serov, V.~I.~Shashkin
\paper Detectors based on low-barrier mott diodes and their characteristics in the 150--250 GHz range
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 5
\pages 56--58
\mathnet{http://mi.mathnet.ru/pjtf5520}
\crossref{https://doi.org/10.21883/PJTF.2019.05.47401.17613}
\elib{https://elibrary.ru/item.asp?id=37481353}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 3
\pages 239--241
\crossref{https://doi.org/10.1134/S1063785019030179}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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