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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 5, Pages 746–753
DOI: https://doi.org/10.21883/JTF.2017.05.44449.1821 (Mi jtf6238) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Solid-State Electronics

Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

S. Koroleva, N. V. Vostokovab, N. V. D'yakonovac, V. I. Shashkinab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Université Montpellier II, Montpellier, France
Full-text PDF (213 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2017.05.44449.1821
Abstract: The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height on the above characteristics has been analyzed.
Received: 28.03.2016
Revised: 03.10.2016
English version:
Technical Physics, 2017, Volume 62, Issue 5, Pages 765–772
DOI: https://doi.org/10.1134/S1063784217050139
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Korolev, N. V. Vostokov, N. V. D'yakonova, V. I. Shashkin, “Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 746–753; Tech. Phys., 62:5 (2017), 765–772
Citation in format AMSBIB
\Bibitem{KorVosDya17}
\by S.~Korolev, N.~V.~Vostokov, N.~V.~D'yakonova, V.~I.~Shashkin
\paper Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 5
\pages 746--753
\mathnet{http://mi.mathnet.ru/jtf6238}
\crossref{https://doi.org/10.21883/JTF.2017.05.44449.1821}
\elib{https://elibrary.ru/item.asp?id=29365788}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 5
\pages 765--772
\crossref{https://doi.org/10.1134/S1063784217050139}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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