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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. L. Gnatyuk, A. V. Zuev, D. V. Krapukhin, P. P. Maltsev, D. N. Sovyk, V. G. Ral'chenko, “Measurement of radio transparency of polycrystalline CVD-diamond in millimeter-wave range by free-space method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 43–46   |
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2018 |
| 2. |
G. B. Galiev, E. A. Klimov, A. N. Klochkov, S. S. Pushkarev, P. P. Maltsev, “Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 395–401 ; Semiconductors, 52:3 (2018), 376–382 |
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2017 |
| 3. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov, D. N. Slapovskiy, I. A. Glinskiy, D. V. Lavrukhin, O. A. Ruban, P. P. Maltsev, “Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272 ; Semiconductors, 51:9 (2017), 1218–1223 |
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| 4. |
G. B. Galiev, A. N. Klochkov, I. S. Vasil'evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev, “Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797 ; Semiconductors, 51:6 (2017), 760–765 |
| 5. |
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546 ; Semiconductors, 51:4 (2017), 514–519 |
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| 6. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov, “Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 535–539 ; Semiconductors, 51:4 (2017), 509–513 |
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| 7. |
G. B. Galiev, S. S. Pushkarev, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, E. A. Klimov, I. S. Vasil'evskii, P. P. Maltsev, “Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 529–534 ; Semiconductors, 51:4 (2017), 503–508 |
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| 8. |
G. B. Galiev, M. M. Grekhov, G. Kh. Kitaeva, E. A. Klimov, A. N. Klochkov, O. S. Kolentsova, V. V. Kornienko, K. A. Kuznetsov, P. P. Maltsev, S. S. Pushkarev, “Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 322–330 ; Semiconductors, 51:3 (2017), 310–317 |
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2016 |
| 9. |
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN ÍÅÌÒs with in situ Si$_{3}$N$_{4}$ passivation”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438 ; Semiconductors, 50:10 (2016), 1416–1420 |
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| 10. |
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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| 11. |
D. V. Gromov, P. P. Maltsev, S. A. Polevich, “Laser-assisted simulation of transient radiation effects in heterostructure components based on À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ semiconductor compounds”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 223–228 ; Semiconductors, 50:2 (2016), 222–227 |
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| 12. |
G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin, P. P. Maltsev, “Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203 ; Semiconductors, 50:2 (2016), 195–203 |
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| 13. |
R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugaev, P. P. Maltsev, “Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 185–190 ; Semiconductors, 50:2 (2016), 185–190 |
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