Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 185–190 (Mi phts6535)  
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates

R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugaev, P. P. Maltsev

Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
Full-text PDF (1132 kB) Citations (5)
Abstract: Electron transport and optical properties are studied for structures with atomic tin nanowires (Sn-NWs) on vicinal GaAs substrates with misorientation angles of 0.3 and 3$^\circ$ with respect to the exact (100) orientation. Saturation-current anisotropy is revealed in the current–voltage characteristics of the samples for current flows along ($\parallel$ orientation) and across ($\perp$ orientation) the Sn-NWs: the current ratios $I_\parallel/I_\perp$ are $\sim$1.2 and $\sim$2.5 for homostructures and pseudomorphic high electron mobility transistor (PHEMT) structures, respectively. The effect of the pulling voltage and illumination on current oscillations is studied in real time in the case of current flows perpendicular to the Sn-NWs. Clear anisotropy of the PHEMT frequency characteristics is shown.
Keywords: GaAs, Current Flow, Quantum Well, Current Oscillation.
Received: 13.01.2015
Accepted: 20.04.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 185–190
DOI: https://doi.org/10.1134/S1063782616020123
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugaev, P. P. Maltsev, “Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 185–190; Semiconductors, 50:2 (2016), 185–190
Citation in format AMSBIB
\Bibitem{KhaYacLav16}
\by R.~A.~Khabibullin, A.~E.~Yachmenev, D.~V.~Lavrukhin, D.~S.~Ponomarev, A.~S.~Bugaev, P.~P.~Maltsev
\paper Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 185--190
\mathnet{http://mi.mathnet.ru/phts6535}
\elib{https://elibrary.ru/item.asp?id=25668084}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 185--190
\crossref{https://doi.org/10.1134/S1063782616020123}
Linking options:
  • https://www.mathnet.ru/eng/phts6535
  • https://www.mathnet.ru/eng/phts/v50/i2/p185
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:36
    Full-text PDF :9
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024