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This article is cited in 15 scientific papers (total in 15 papers)
Semiconductor physics
Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
D. S. Ponomareva, R. A. Khabibullina, A. E. Yachmeneva, P. P. Maltseva, M. M. Grekhovb, I. E. Ilyakovc, B. V. Shishkinc, R. A. Akhmedzhanovc a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Federal Research Center The Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod
Abstract:
The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In$_{0.38}$Ga$_{0.62}$As, photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10$^{-5}$ at a rather low optical fluence of $\sim$40 $\mu$J/cm$^2$, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.
Received: 26.09.2016 Accepted: 03.10.2016
Citation:
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov, “Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 535–539; Semiconductors, 51:4 (2017), 509–513
Linking options:
https://www.mathnet.ru/eng/phts6190 https://www.mathnet.ru/eng/phts/v51/i4/p535
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