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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 195–203
(Mi phts6537)
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This article is cited in 8 scientific papers (total in 8 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
G. B. Galieva, E. A. Klimova, M. M. Grekhovb, S. S. Pushkareva, D. V. Lavrukhina, P. P. Maltseva a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
Undoped, uniformly Si-doped, and $\delta$-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111)A-oriented GaAs substrates at a temperature of 230$^\circ$C are studied. The As$_4$ pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As$_4$ flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.
Keywords:
GaAs, Photoluminescence Property, Dopant Impurity, Principal Peak, GaAs Film.
Received: 19.05.2015 Accepted: 03.06.2015
Citation:
G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin, P. P. Maltsev, “Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203; Semiconductors, 50:2 (2016), 195–203
Linking options:
https://www.mathnet.ru/eng/phts6537 https://www.mathnet.ru/eng/phts/v50/i2/p195
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