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This article is cited in 15 scientific papers (total in 15 papers)
Spectroscopy, interaction with radiation
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
G. B. Galieva, M. M. Grekhovb, G. Kh. Kitaevac, E. A. Klimova, A. N. Klochkova, O. S. Kolentsovab, V. V. Kornienkoc, K. A. Kuznetsovc, P. P. Maltseva, S. S. Pushkareva a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Faculty of Physics, Lomonosov Moscow State University
Abstract:
The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In$_{0.53}$Ga$_{0.47}$As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In$_{0.53}$Ga$_{0.47}$As films are fabricated by molecular-beam epitaxy at a temperature of 200$^\circ$C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.
Received: 10.05.2016 Accepted: 18.05.2016
Citation:
G. B. Galiev, M. M. Grekhov, G. Kh. Kitaeva, E. A. Klimov, A. N. Klochkov, O. S. Kolentsova, V. V. Kornienko, K. A. Kuznetsov, P. P. Maltsev, S. S. Pushkarev, “Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 322–330; Semiconductors, 51:3 (2017), 310–317
Linking options:
https://www.mathnet.ru/eng/phts6203 https://www.mathnet.ru/eng/phts/v51/i3/p322
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