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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4, Pages 529–534
DOI: https://doi.org/10.21883/FTP.2017.04.44347.8408 (Mi phts6189) 		 
This article is cited in 18 scientific papers (total in 18 papers)

Semiconductor physics

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

G. B. Galieva, S. S. Pushkareva, A. M. Buryakovb, V. R. Bilykb, E. D. Mishinab, E. A. Klimova, I. S. Vasil'evskiic, P. P. Maltseva

a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b MIREA — Russian Technological University, Moscow
c National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (713 kB) Citations (18)
DOI: https://doi.org/10.21883/FTP.2017.04.44347.8408
Abstract: The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping $\delta$ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
Received: 20.09.2016
Accepted: 26.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 4, Pages 503–508
DOI: https://doi.org/10.1134/S1063782617040054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. B. Galiev, S. S. Pushkarev, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, E. A. Klimov, I. S. Vasil'evskii, P. P. Maltsev, “Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 529–534; Semiconductors, 51:4 (2017), 503–508
Citation in format AMSBIB
\Bibitem{GalPusBur17}
\by G.~B.~Galiev, S.~S.~Pushkarev, A.~M.~Buryakov, V.~R.~Bilyk, E.~D.~Mishina, E.~A.~Klimov, I.~S.~Vasil'evskii, P.~P.~Maltsev
\paper Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 4
\pages 529--534
\mathnet{http://mi.mathnet.ru/phts6189}
\crossref{https://doi.org/10.21883/FTP.2017.04.44347.8408}
\elib{https://elibrary.ru/item.asp?id=29404896}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 4
\pages 503--508
\crossref{https://doi.org/10.1134/S1063782617040054}
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    • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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