|
This article is cited in 16 scientific papers (total in 16 papers)
Semiconductor physics
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
G. B. Galieva, S. S. Pushkareva, A. M. Buryakovb, V. R. Bilykb, E. D. Mishinab, E. A. Klimova, I. S. Vasil'evskiic, P. P. Maltseva a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b MIREA — Russian Technological University, Moscow
c National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping $\delta$ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
Received: 20.09.2016 Accepted: 26.09.2016
Citation:
G. B. Galiev, S. S. Pushkarev, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, E. A. Klimov, I. S. Vasil'evskii, P. P. Maltsev, “Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 529–534; Semiconductors, 51:4 (2017), 503–508
Linking options:
https://www.mathnet.ru/eng/phts6189 https://www.mathnet.ru/eng/phts/v51/i4/p529
|
Statistics & downloads: |
Abstract page: | 31 | Full-text PDF : | 11 |
|