Laser-assisted simulation of transient radiation effects in heterostructure components based on А$^{\mathrm{III}}$В$^{\mathrm{V}}$ semiconductor compounds

The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on А$^{\mathrm{III}}$В$^{\mathrm{V}}$ semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of $\lambda$ = 880–900 nm taking into account the dominant mechanisms of ionization in the transistor regions.