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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev, “Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1077–1080   |
| 2. |
L. I. Goray, E. V. Pirogov, M. V. Svechnikov, M. S. Sobolev, N. K. Polyakov, L. G. Gerchikov, E. V. Nikitina, A. S. Dashkov, M. M. Borisov, S. N. Yakunin, A. D. Bouravlev, “High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 7–10 ; Tech. Phys. Lett., 47:10 (2021), 757–760 |
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2020 |
| 3. |
V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, E. V. Nikitina, “Correcting the characteristics of silicon photodiodes by ion implantation”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 557–563 ; Semiconductors, 54:6 (2020), 666–671 |
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| 4. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, S. A. Kukushkin, “Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 346–354 ; Semiconductors, 54:4 (2020), 417–425 |
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2019 |
| 5. |
D. V. Mokhov, T. N. Berezovskaya, E. V. Nikitina, K. Yu. Shubina, A. M. Mizerov, A. D. Bouravlev, “The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1726–1732 ; Semiconductors, 53:12 (2019), 1717–1723 |
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| 6. |
A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, M. S. Sobolev, K. Yu. Shubin, T. N. Berezovskaya, D. V. Mokhov, V. V. Lundin, A. E. Nikolaev, A. D. Bouravlev, “On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1212–1217 ; Semiconductors, 53:9 (2019), 1187–1191 |
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| 7. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
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2018 |
| 8. |
A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev, “Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1425–1429 ; Semiconductors, 52:12 (2018), 1529–1533 |
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| 9. |
G. Pozina, M. A. Kaliteevskii, E. V. Nikitina, A. R. Gubaidullin, K. A. Ivanov, A. Yu. Egorov, “Experimental study of spontaneous emission in Bragg multiple- quantum-well structures with InAs single-layer quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 736–740 ; Semiconductors, 52:7 (2018), 877–880 |
| 10. |
Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina, “Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 524 ; Semiconductors, 52:5 (2018), 660–663 |
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2017 |
| 11. |
N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280 ; Semiconductors, 51:2 (2017), 267–271 |
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| 12. |
K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. M. Mizerov, E. V. Nikitina, “The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 47–54 ; Tech. Phys. Lett., 43:11 (2017), 976–978 |
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| 13. |
E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102 ; Tech. Phys. Lett., 43:9 (2017), 863–865 |
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2016 |
| 14. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889 ; Phys. Solid State, 58:10 (2016), 1952–1955 |
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| 15. |
A. V. Babichev, A. Bousseksou, N. A. Pikhtin, I. S. Tarasov, E. V. Nikitina, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1320–1324 ; Semiconductors, 50:10 (2016), 1299–1303 |
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| 16. |
E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667 ; Semiconductors, 50:5 (2016), 652–655 |
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| 17. |
S. A. Blokhin, N. V. Kryzhanovskaya, È. I. Moiseev, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, V. N. Nevedomskiy, E. V. Nikitina, N. A. Maleev, V. M. Ustinov, “Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79 ; Tech. Phys. Lett., 42:10 (2016), 1009–1012 |
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| 18. |
A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 14–19 ; Tech. Phys. Lett., 42:3 (2016), 284–286 |
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