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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1726–1732
DOI: https://doi.org/10.21883/FTP.2019.12.48635.9220 (Mi phts5343) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Manufacturing, processing, testing of materials and structures

The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers

D. V. Mokhova, T. N. Berezovskayaab, E. V. Nikitinaa, K. Yu. Shubinaa, A. M. Mizerova, A. D. Bouravlevabc

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (3247 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.12.48635.9220
Abstract: The results of the study of photochemical etching without the application of external voltage, structures with Ga- and N-polar GaN layers synthesized by molecular beam epitaxy with plasma activation of nitrogen are presented. It is shown that the etching rate of layers with different polarities is very different. In this case, the use of gold-based masks for etching of GaN layers instead of titanium also makes it possible to increase the etching rate of the layers.
Keywords: GaN layers, photochemical etching, metal-assisted.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.9789.2017/БЧ
Skolkovo Institute of Science and Technology 3663-MRA
The part of the study concerned with growth experiments was supported by the Ministry of Education and Science of the Russian Federation, government order no. 16.9789.2017/BCh. The part of the study concerned with morphological measurements and etching of the samples was carried out in accordance with a general agreement on the scientific research activity between Skolkovo Institute of Science and Technology and St. Petersburg Academic University, Russian Academy of Sciences, contract no. 3663-MRA, project no. 4.
Received: 23.07.2019
Revised: 29.07.2019
Accepted: 29.07.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1717–1723
DOI: https://doi.org/10.1134/S1063782619160176
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Mokhov, T. N. Berezovskaya, E. V. Nikitina, K. Yu. Shubina, A. M. Mizerov, A. D. Bouravlev, “The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1726–1732; Semiconductors, 53:12 (2019), 1717–1723
Citation in format AMSBIB
\Bibitem{MokBerNik19}
\by D.~V.~Mokhov, T.~N.~Berezovskaya, E.~V.~Nikitina, K.~Yu.~Shubina, A.~M.~Mizerov, A.~D.~Bouravlev
\paper The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1726--1732
\mathnet{http://mi.mathnet.ru/phts5343}
\crossref{https://doi.org/10.21883/FTP.2019.12.48635.9220}
\elib{https://elibrary.ru/item.asp?id=41848207}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1717--1723
\crossref{https://doi.org/10.1134/S1063782619160176}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1726
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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