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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 18, Pages 97–102
DOI: https://doi.org/10.21883/PJTF.2017.18.45039.16643 (Mi pjtf6126) 		 
This article is cited in 1 scientific paper (total in 1 paper)

The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT

E. V. Nikitinaab, A. Lazarenkoa, E. V. Pirogova, M. S. Soboleva, T. N. Berezovskayaa

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint-Petersburg Scientific Center, Russian Academy of Sciences
Full-text PDF (88 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2017.18.45039.16643
Abstract: We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
Received: 27.12.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 9, Pages 863–865
DOI: https://doi.org/10.1134/S1063785017090243
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102; Tech. Phys. Lett., 43:9 (2017), 863–865
Citation in format AMSBIB
\Bibitem{NikLazPir17}
\by E.~V.~Nikitina, A.~Lazarenko, E.~V.~Pirogov, M.~S.~Sobolev, T.~N.~Berezovskaya
\paper The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 18
\pages 97--102
\mathnet{http://mi.mathnet.ru/pjtf6126}
\crossref{https://doi.org/10.21883/PJTF.2017.18.45039.16643}
\elib{https://elibrary.ru/item.asp?id=29935985}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 9
\pages 863--865
\crossref{https://doi.org/10.1134/S1063785017090243}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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