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This article is cited in 1 scientific paper (total in 1 paper)
The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
E. V. Nikitinaab, A. Lazarenkoa, E. V. Pirogova, M. S. Soboleva, T. N. Berezovskayaa a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint-Petersburg Scientific Center, Russian Academy of Sciences
Abstract:
We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
Received: 27.12.2016
Citation:
E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102; Tech. Phys. Lett., 43:9 (2017), 863–865
Linking options:
https://www.mathnet.ru/eng/pjtf6126 https://www.mathnet.ru/eng/pjtf/v43/i18/p97
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