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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 663–667 (Mi phts6469)  
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

GaAs/InGaAsN heterostructures for multi-junction solar cells

E. V. Nikitinaa, A. S. Gudovskikhab, A. Lazarenkoa, E. V. Pirogova, M. S. Soboleva, K. S. Zelentsova, I. A. Morozova, A. Yu. Egorovc

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (389 kB) Citations (3)
Abstract: Solar-cell heterostructures based on GaAs/InGaAsN materials with an InAs/GaAsN superlattice, grown by molecular beam epitaxy, are studied. A $p$-GaAs/$i$-(InAs/GaAsN)/$n$-GaAs $p$–$i$–$n$ test solar cell with a 0.9-$\mu$m-thick InGaAsN layer has an open-circuit voltage of 0.4 V (1 sun, AM1.5G) and a quantum efficiency of $>$ 0.75 at a wavelength of 940 nm (at zero reflection loss), which corresponds to a short-circuit current of 26.58 mA/cm$^2$ (AM1.5G, 100 mW/cm$^2$). The high open-circuit voltage demonstrates that InGaAsN can be used as a material with a band gap of 1 eV in four-cascade solar cells.
Keywords: GaAs, Solar Cell, Quantum Efficiency, Gallium Arsenide, Reflection Loss.
Received: 07.10.2015
Accepted: 16.10.2015
English version:
Semiconductors, 2016, Volume 50, Issue 5, Pages 652–655
DOI: https://doi.org/10.1134/S106378261605016X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667; Semiconductors, 50:5 (2016), 652–655
Citation in format AMSBIB
\Bibitem{NikGudLaz16}
\by E.~V.~Nikitina, A.~S.~Gudovskikh, A.~Lazarenko, E.~V.~Pirogov, M.~S.~Sobolev, K.~S.~Zelentsov, I.~A.~Morozov, A.~Yu.~Egorov
\paper GaAs/InGaAsN heterostructures for multi-junction solar cells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 5
\pages 663--667
\mathnet{http://mi.mathnet.ru/phts6469}
\elib{https://elibrary.ru/item.asp?id=27368891}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 5
\pages 652--655
\crossref{https://doi.org/10.1134/S106378261605016X}
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  • https://www.mathnet.ru/eng/phts/v50/i5/p663
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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