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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Sushkov, D. A. Pavlov, A. I. Andrianov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, N. V. Baidus, D. V. Yurasov, A. V. Rykov, “Comparison of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 978–988   |
| 2. |
A. A. Ezhevskii, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, A. V. Novikov, D. V. Yurasov, N. S. Gusev, “Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 654–658 |
| 3. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, E. E. Morozova, D. V. Shengurov, A. N. Yablonskii, A. V. Novikov, “Formation and optical properties of locally strained Ge microstructures embedded into cavities”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 420–426 ; Semiconductors, 55:6 (2021), 531–536 |
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2020 |
| 4. |
D. V. Yurasov, A. V. Novikov, S. A. Dyakov, M. V. Stepikhova, A. N. Yablonskii, S. M. Sergeev, D. E. Utkin, Z. F. Krasil'nik, “Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 822–829 ; Semiconductors, 54:8 (2020), 975–981 |
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| 5. |
D. V. Yurasov, N. A. Baidakova, A. N. Yablonskii, A. V. Novikov, “Influence of the growth conditions and doping level on the luminescence kinetics of Ge:Sb layers grown on silicon”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 685–690 ; Semiconductors, 54:7 (2020), 811–816 |
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2019 |
| 6. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, A. I. Mashin, E. E. Morozova, A. V. Nezhdanov, A. V. Novikov, E. V. Skorokhodov, D. V. Shengurov, A. N. Yablonskii, “Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1360–1365 ; Semiconductors, 53:10 (2019), 1324–1328 |
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| 7. |
A. V. Novikov, D. V. Yurasov, N. A. Baidakova, P. A. Bushuikin, B. A. Andreev, P. A. Yunin, M. N. Drozdov, A. N. Yablonskii, M. A. Kalinnikov, Z. F. Krasil'nik, “Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1354–1359 ; Semiconductors, 53:10 (2019), 1318–1323 |
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| 8. |
D. V. Yurasov, N. A. Baidakova, M. N. Drozdov, E. E. Morozova, M. A. Kalinnikov, A. V. Novikov, “Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 897–902 ; Semiconductors, 53:7 (2019), 882–886 |
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2018 |
| 9. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
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| 10. |
K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1384–1389 ; Semiconductors, 52:11 (2018), 1495–1499 |
| 11. |
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336 ; Semiconductors, 52:11 (2018), 1442–1447 |
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| 12. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
| 13. |
M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 11–19 ; Tech. Phys. Lett., 44:4 (2018), 320–323 |
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2017 |
| 14. |
D. V. Yurasov, M. N. Drozdov, V. B. Shmagin, A. V. Novikov, “Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1611–1615 ; Semiconductors, 51:12 (2017), 1552–1556 |
| 15. |
N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, N. Usami, “Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1599–1604 ; Semiconductors, 51:12 (2017), 1542–1546 |
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| 16. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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| 17. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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| 18. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 695–698 ; Semiconductors, 51:5 (2017), 663–666 |
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2016 |
| 19. |
N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1685–1689 ; Semiconductors, 50:12 (2016), 1657–1661 |
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| 20. |
A. V. Novikov, M. V. Shaleev, D. V. Yurasov, P. A. Yunin, “Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1657–1661 ; Semiconductors, 50:12 (2016), 1630–1634 |
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| 21. |
A. N. Yablonskii, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev, “On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1629–1633 ; Semiconductors, 50:12 (2016), 1604–1608 |
| 22. |
M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016), 40–48 ; Tech. Phys. Lett., 42:3 (2016), 243–247 |
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