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This article is cited in 10 scientific papers (total in 10 papers)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
N. A. Baidakovaa, V. A. Verbusab, E. E. Morozovaa, A. V. Novikovca, E. V. Skorokhodova, M. V. Shaleeva, D. V. Yurasova, A. Hombed, Y. Kurokawad, N. Usamid a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b State University – Higher School of Economics, Nizhny Novgorod Branch
c Lobachevsky State University of Nizhny Novgorod
d Nagoya University, Nagoya, Japan
Abstract:
Dependences of the etch rates for KOH and HF:H$_{2}$O$_{2}$:CH$_{3}$COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H$_{2}$O$_{2}$:CH$_{3}$COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.
Received: 17.04.2017 Accepted: 12.05.2017
Citation:
N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, N. Usami, “Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1599–1604; Semiconductors, 51:12 (2017), 1542–1546
Linking options:
https://www.mathnet.ru/eng/phts5959 https://www.mathnet.ru/eng/phts/v51/i12/p1599
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