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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1657–1661 (Mi phts6289)  
This article is cited in 1 scientific paper (total in 1 paper)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

A. V. Novikovab, M. V. Shaleeva, D. V. Yurasovab, P. A. Yuninab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (1655 kB) Citations (1)
Abstract: The influence of the surface microroughness on the critical thickness for the two-dimensional growth of strained SiGe structures on Si(001) and Ge(001) substrates is investigated. A decrease in the critical thickness for the two-dimensional growth of Ge films with increasing number of lattice periods or a decrease in the thickness of Si spacer layers is found for Ge/Si lattices grown on Si(001) substrates. This change is related to an increase in the surface roughness with the accumulation of elastic energy in compressed structures. A comparative study of the growth of SiGe structures on Si(001) and Ge(001) substrates shows that the critical thickness for the two-dimensional growth of tensile-strained layers is much larger than for compressed layers in a wide range of SiGe-layer compositions at an identical (in magnitude) lattice mismatch between the film and substrate.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1630–1634
DOI: https://doi.org/10.1134/S1063782616120137
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Novikov, M. V. Shaleev, D. V. Yurasov, P. A. Yunin, “Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1657–1661; Semiconductors, 50:12 (2016), 1630–1634
Citation in format AMSBIB
\Bibitem{NovShaYur16}
\by A.~V.~Novikov, M.~V.~Shaleev, D.~V.~Yurasov, P.~A.~Yunin
\paper Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1657--1661
\mathnet{http://mi.mathnet.ru/phts6289}
\elib{https://elibrary.ru/item.asp?id=27369069}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1630--1634
\crossref{https://doi.org/10.1134/S1063782616120137}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1657
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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