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This article is cited in 3 scientific papers (total in 3 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Formation and properties of locally tensile strained Ge microstructures for silicon photonics
A. V. Novikovab, D. V. Yurasova, E. E. Morozovaa, E. V. Skorokhodova, V. A. Verbusac, A. N. Yablonskiia, N. A. Baidakovaa, N. S. Guseva, K. E. Kudryavtsevab, A. V. Nezhdanovb, A. I. Mashinb a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c State University – Higher School of Economics, Nizhny Novgorod Branch
Abstract:
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to $\sim$2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.
Keywords:
High Tensile Strain, microPL Spectra, Strain Distribution, Plasma Chemical Etching, Suspended Part.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336; Semiconductors, 52:11 (2018), 1442–1447
Linking options:
https://www.mathnet.ru/eng/phts5691 https://www.mathnet.ru/eng/phts/v52/i11/p1331
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