|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000   ; Tech. Phys., 65:6 (2020), 957–960 |
3
|
| 2. |
N. M. Lebedeva, N. D. Il'inskaya, P. A. Ivanov, “Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 207–211 ; Semiconductors, 54:2 (2020), 258–262 |
3
|
| 3. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
2
|
|
2019 |
| 4. |
A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1604–1608 ; Semiconductors, 53:12 (2019), 1568–1572 |
6
|
| 5. |
A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteĭn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1448–1452 ; Semiconductors, 53:10 (2019), 1409–1413 |
1
|
| 6. |
P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova, “Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 862–864 ; Semiconductors, 53:6 (2019), 850–852 |
1
|
| 7. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, “Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 407–410 ; Semiconductors, 53:3 (2019), 385–387 |
| 8. |
A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848 ; Phys. Usp., 62:8 (2019), 754–794   |
15
|
|
2018 |
| 9. |
P. A. Ivanov, I. V. Grekhov, “Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)”, Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018), 89–92 ; Tech. Phys., 63:1 (2018), 86–89 |
3
|
| 10. |
P. A. Ivanov, “On the spatial localization of free electrons in 4$H$-SiC MOSFETS with an $n$ channel”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 105–109 ; Semiconductors, 52:1 (2018), 100–104 |
1
|
| 11. |
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, M. A. Kozlovskii, T. P. Samsonova, “The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 11–16 ; Tech. Phys. Lett., 44:3 (2018), 229–231 |
5
|
| 12. |
P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, “4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 3–8 ; Tech. Phys. Lett., 44:2 (2018), 87–89 |
9
|
|
2017 |
| 13. |
V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour, “Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1243–1248 ; Semiconductors, 51:9 (2017), 1194–1199 |
2
|
| 14. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 390–394 ; Semiconductors, 51:3 (2017), 374–378 |
6
|
|
2016 |
| 15. |
P. A. Ivanov, I. V. Grekhov, “Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation”, Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016), 85–88 ; Tech. Phys., 61:2 (2016), 240–243 |
4
|
| 16. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 900–904 ; Semiconductors, 50:7 (2016), 883–887 |
4
|
| 17. |
M. S. Ivanov, P. B. Rodin, P. A. Ivanov, I. V. Grekhov, “Parameters of silicon carbide diode avalanche shapers for the picosecond range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 87–94 ; Tech. Phys. Lett., 42:1 (2016), 43–46 |
6
|
| |
|
|
Contact us: