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Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 1, Pages 89–92
DOI: https://doi.org/10.21883/JTF.2018.01.45488.2327 (Mi jtf6024) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Optics

Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)

P. A. Ivanov, I. V. Grekhov

Ioffe Institute, St. Petersburg
Full-text PDF (139 kB) Citations (3)
DOI: https://doi.org/10.21883/JTF.2018.01.45488.2327
Abstract: The time characteristics of pulse generators based on sharp-recovery 4$H$ : SiC drift diodes have been calculated. It has been found that the speed of $n$-base 4$H$-SiC diodes is superior to that of $p$-base diodes with the amplitude and initial pedestal in the output voltage ($<$ 5% of the amplitude) versus the time curve being the same.
Funding agency Grant number
Russian Science Foundation 14-29-00094
Received: 11.05.2017
English version:
Technical Physics, 2018, Volume 63, Issue 1, Pages 86–89
DOI: https://doi.org/10.1134/S1063784218010152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, I. V. Grekhov, “Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)”, Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018), 89–92; Tech. Phys., 63:1 (2018), 86–89
Citation in format AMSBIB
\Bibitem{IvaGre18}
\by P.~A.~Ivanov, I.~V.~Grekhov
\paper Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 1
\pages 89--92
\mathnet{http://mi.mathnet.ru/jtf6024}
\crossref{https://doi.org/10.21883/JTF.2018.01.45488.2327}
\elib{https://elibrary.ru/item.asp?id=32737524}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 1
\pages 86--89
\crossref{https://doi.org/10.1134/S1063784218010152}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
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