Parameters of silicon carbide diode avalanche shapers for the picosecond range

Parameters of ultrafast avalanche switching of high-voltage diode structures based on 4$H$-SiC have been estimated theoretically. The calculation was carried out using the analytical theory of the impact ionization wave of the TRAPATT type, which makes it possible to determine the main characteristics of a wave for arbitrary dependences of the impact ionization coefficients and carrier drift velocity on electric field. It is shown that, for a high-voltage (1–10 kV) 4$H$-SiC structure, the time of switching from the blocking to the conducting state is $\sim$10 ps, which is an order of magnitude shorter than that for a Si structure with the same stationary breakdown voltage, and the concentration of the electron-hole plasma created by the wave is two orders of magnitude higher. Picosecond switching times can be reached for 4$H$-SiC structures with a stationary breakdown voltage exceeding 10 kV.