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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 2, Pages 85–88
(Mi jtf6635)
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This article is cited in 4 scientific papers (total in 4 papers)
Solid-State Electronics
Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
P. A. Ivanov, I. V. Grekhov Ioffe Institute, St. Petersburg
Abstract:
The generation of high-voltage electrical pulses by generators based on 4H : SiC sharp-recovery drift diode is demonstrated. It is shown that the electron drift velocity saturation influences the shape of output pulses.
Keywords:
Pulse Generator, Output Pulse, Space Charge Region, Circuit Breaker, Electron Drift Velocity.
Received: 21.05.2015
Citation:
P. A. Ivanov, I. V. Grekhov, “Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation”, Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016), 85–88; Tech. Phys., 61:2 (2016), 240–243
Linking options:
https://www.mathnet.ru/eng/jtf6635 https://www.mathnet.ru/eng/jtf/v86/i2/p85
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