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Ivanov, Pavel Anatolievich

Statistics Math-Net.Ru
Total publications: 17
Scientific articles: 17

Number of views:
This page:91
Abstract pages:1046
Full texts:353
References:30
Head Scientist Researcher
Doctor of physico-mathematical sciences
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https://www.mathnet.ru/eng/person140988
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Publications in Math-Net.Ru Citations
2020
1. N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000  mathnet  elib; Tech. Phys., 65:6 (2020), 957–960 3
2. N. M. Lebedeva, N. D. Il'inskaya, P. A. Ivanov, “Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211  mathnet  elib; Semiconductors, 54:2 (2020), 258–262 3
3. N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102  mathnet  elib; Semiconductors, 54:1 (2020), 144–149 3
2019
4. A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608  mathnet  elib; Semiconductors, 53:12 (2019), 1568–1572 6
5. A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteĭn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452  mathnet  elib; Semiconductors, 53:10 (2019), 1409–1413 1
6. P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova, “Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  862–864  mathnet  elib; Semiconductors, 53:6 (2019), 850–852 1
7. P. A. Ivanov, A. S. Potapov, T. P. Samsonova, “Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  407–410  mathnet  elib; Semiconductors, 53:3 (2019), 385–387
8. A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019),  803–848  mathnet  elib; Phys. Usp., 62:8 (2019), 754–794  isi  scopus 15
2018
9. P. A. Ivanov, I. V. Grekhov, “Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)”, Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018),  89–92  mathnet  elib; Tech. Phys., 63:1 (2018), 86–89 3
10. P. A. Ivanov, “On the spatial localization of free electrons in 4$H$-SiC MOSFETS with an $n$ channel”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  105–109  mathnet  elib; Semiconductors, 52:1 (2018), 100–104 1
11. P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, M. A. Kozlovskii, T. P. Samsonova, “The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  11–16  mathnet  elib; Tech. Phys. Lett., 44:3 (2018), 229–231 5
12. P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, “4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  3–8  mathnet  elib; Tech. Phys. Lett., 44:2 (2018), 87–89 9
2017
13. V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour, “Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248  mathnet  elib; Semiconductors, 51:9 (2017), 1194–1199 2
14. P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$$n_{0}$$n^{+}$ diodes in the avalanche breakdown mode”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  390–394  mathnet  elib; Semiconductors, 51:3 (2017), 374–378 6
2016
15. P. A. Ivanov, I. V. Grekhov, “Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation”, Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016),  85–88  mathnet  elib; Tech. Phys., 61:2 (2016), 240–243 4
16. P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  900–904  mathnet  elib; Semiconductors, 50:7 (2016), 883–887 4
17. M. S. Ivanov, P. B. Rodin, P. A. Ivanov, I. V. Grekhov, “Parameters of silicon carbide diode avalanche shapers for the picosecond range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  87–94  mathnet  elib; Tech. Phys. Lett., 42:1 (2016), 43–46 6
 
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