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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, N. A. Maleev, V. V. Andryushkin, V. E. Bugrov, A. G. Gladyshev, N. V. Kryzhanovskaya, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, “High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method”, Kvantovaya Elektronika, 52:10 (2022), 878–884  [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S140–S147] |
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2021 |
| 2. |
A. M. Smirnov, A. V. Kremleva, Sh. Sh. Sharofidinov, V. E. Bugrov, A. E. Romanov, “Misfit stress relaxation in $\alpha$-Ga$_{2}$O$_{3}$/$\alpha$-Al$_{2}$O$_{3}$ heterostructures via formation of misfit dislocations”, Fizika Tverdogo Tela, 63:6 (2021), 788–795  ; Phys. Solid State, 63:6 (2021), 924–931 |
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| 3. |
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426 ; Phys. Solid State, 63:4 (2021), 544–549 |
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| 4. |
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuz'menkov, A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, V. E. Bugrov, “Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017 |
| 5. |
N. A. Maleev, A. G. Kuz'menkov, M. M. Kulagina, A. P. Vasil'ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov, “Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 36–38 |
| 6. |
D. A. Bauman, L. A. Pyankova, A. V. Kremleva, V. A. Spiridonov, D. Yu. Panov, D. A. Zakgeim, A. S. Bakhvalov, M. A. Odnoblyudov, A. E. Romanov, V. E. Bugrov, “Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 19–22 ; Tech. Phys. Lett., 47:3 (2021), 218–221 |
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2020 |
| 7. |
D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, A. M. Smirnov, D. A. Bauman, A. E. Romanov, M. A. Odnoblyudov, V. E. Bugrov, “Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 43–45 ; Tech. Phys. Lett., 46:11 (2020), 1144–1146 |
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| 8. |
S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30 ; Tech. Phys. Lett., 46:11 (2020), 1128–1131 |
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2019 |
| 9. |
L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, A. S. Ionov, V. E. Bugrov, A. Yu. Egorov, “Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice”, Optics and Spectroscopy, 127:6 (2019), 963–966 ; Optics and Spectroscopy, 127:6 (2019), 1053–1056 |
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| 10. |
A. V. Babichev, V. V. Dyudelev, A. G. Gladyshev, D. A. Mikhailov, A. S. Kurochkin, E. S. Kolodeznyi, V. E. Bugrov, V. N. Nevedomskiy, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 48–51 ; Tech. Phys. Lett., 45:7 (2019), 735–738 |
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| 11. |
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, V. V. Dyudelev, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. Yu. Egorov, “Room temperature lasing of single-mode arched-cavity quantum-cascade lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 31–33 ; Tech. Phys. Lett., 45:4 (2019), 398–400 |
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2018 |
| 12. |
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, A. Bousseksou, A. Yu. Egorov, “Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 954–957 ; Semiconductors, 52:8 (2018), 1082–1085 |
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| 13. |
N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov, “Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 207–220 ; Semiconductors, 52:2 (2018), 195–208 |
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| 14. |
M. S. Buyalo, I. M. Gadzhiev, N. D. Il'inskaya, A. A. Usikova, I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. Yu. Egorov, E. L. Portnoĭ, “Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 95–102 ; Tech. Phys. Lett., 44:2 (2018), 174–177 |
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| 15. |
V. V. Dyudelev, A. R. Akhmatkhanov, E. D. Greshnyakov, S. Kh. Abdulrazak, V. E. Bugrov, E. A. Kognovitskaya, V. I. Kuchinskii, V. Ya. Shur, G. S. Sokolovskii, “Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate”, Kvantovaya Elektronika, 48:8 (2018), 717–719 [Quantum Electron., 48:8 (2018), 717–719   ] |
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2017 |
| 16. |
K. J. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bugrov, “Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252 ; Semiconductors, 51:2 (2017), 239–244 |
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| 17. |
A. V. Babichev, A. G. Gladyshev, A. V. Filimonov, V. N. Nevedomskiy, A. S. Kurochkin, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, A. Bousseksou, A. Yu. Egorov, “Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017), 64–71 ; Tech. Phys. Lett., 43:7 (2017), 666–669 |
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2016 |
| 18. |
I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savel'ev, I. A. Nyapshaev, A. Yu. Egorov, “On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1429–1433 ; Semiconductors, 50:10 (2016), 1412–1415 |
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| 19. |
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000 ; Semiconductors, 50:7 (2016), 980–983 |
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| 20. |
A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy, V. E. Bugrov, “Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 624–627 ; Semiconductors, 50:5 (2016), 612–615 |
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| 21. |
Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov, A. E. Romanov, “On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552 ; Semiconductors, 50:4 (2016), 541–544 |
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