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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1429–1433 (Mi phts6351)  
This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor physics

On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

I. I. Novikovab, L. Ya. Karachinskyab, E. S. Kolodeznyib, V. E. Bugrovb, A. S. Kurochkinab, A. G. Gladyshevab, A. V. Babichevab, I. M. Gadzhievbc, M. S. Buyalobc, Yu. M. Zadiranovc, A. A. Usikovac, Yu. M. Shernyakovc, A. V. Savel'evb, I. A. Nyapshaevb, A. Yu. Egorovba

a Connector Optics LLC, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ioffe Institute, St. Petersburg
Full-text PDF (122 kB) Citations (9)
Abstract: The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm$^{-1}$ and a low transparency current density of 46 A/cm$^2$ per quantum well.
Received: 10.05.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 10, Pages 1412–1415
DOI: https://doi.org/10.1134/S1063782616100201
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savel'ev, I. A. Nyapshaev, A. Yu. Egorov, “On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1429–1433; Semiconductors, 50:10 (2016), 1412–1415
Citation in format AMSBIB
\Bibitem{NovKarKol16}
\by I.~I.~Novikov, L.~Ya.~Karachinsky, E.~S.~Kolodeznyi, V.~E.~Bugrov, A.~S.~Kurochkin, A.~G.~Gladyshev, A.~V.~Babichev, I.~M.~Gadzhiev, M.~S.~Buyalo, Yu.~M.~Zadiranov, A.~A.~Usikova, Yu.~M.~Shernyakov, A.~V.~Savel'ev, I.~A.~Nyapshaev, A.~Yu.~Egorov
\paper On the gain properties of ``thin'' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 10
\pages 1429--1433
\mathnet{http://mi.mathnet.ru/phts6351}
\elib{https://elibrary.ru/item.asp?id=27369025}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 10
\pages 1412--1415
\crossref{https://doi.org/10.1134/S1063782616100201}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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