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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 22, Pages 27–30
DOI: https://doi.org/10.21883/PJTF.2020.22.50304.18421 (Mi pjtf4936) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency

S. S. Rochasa, I. I. Novikova, A. G. Gladysheva, E. S. Kolodeznyia, A. V. Babicheva, V. V. Andryushkina, V. N. Nevedomskiyb, D. V. Denisovc, L. Ya. Karachinskya, A. Yu. Egorovd, V. E. Bugrova

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
d Connector Optics LLC, St. Petersburg
Full-text PDF (152 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2020.22.50304.18421
Abstract: We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-$\mu$m spectral range. The heterostructures were characterized by measuring photoluminescence (PL) emission and X-ray diffraction. It is established that variation of the ratio of quantum-well and barrier-layer thicknesses in the SL allows controlled shift of the PL peak position for lasing in the 1.3-$\mu$m range at almost constant PL efficiency.
Keywords: vertical-cavity surface-emitting laser, active region, superlattice, quantum well, molecular-beam epitaxy.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 2019-1442
This work was supported by the Ministry of Science and Higher Education of the Russian Federation, research project no. 2019-1442.
Received: 11.06.2020
Revised: 23.07.2020
Accepted: 04.08.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 11, Pages 1128–1131
DOI: https://doi.org/10.1134/S1063785020110267
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30; Tech. Phys. Lett., 46:11 (2020), 1128–1131
Citation in format AMSBIB
\Bibitem{RocNovGla20}
\by S.~S.~Rochas, I.~I.~Novikov, A.~G.~Gladyshev, E.~S.~Kolodeznyi, A.~V.~Babichev, V.~V.~Andryushkin, V.~N.~Nevedomskiy, D.~V.~Denisov, L.~Ya.~Karachinsky, A.~Yu.~Egorov, V.~E.~Bugrov
\paper The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 22
\pages 27--30
\mathnet{http://mi.mathnet.ru/pjtf4936}
\crossref{https://doi.org/10.21883/PJTF.2020.22.50304.18421}
\elib{https://elibrary.ru/item.asp?id=44367785}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 11
\pages 1128--1131
\crossref{https://doi.org/10.1134/S1063785020110267}
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