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This article is cited in 1 scientific paper (total in 1 paper)
Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals
D. A. Baumana, L. A. Pyankovab, A. V. Kremlevaa, V. A. Spiridonova, D. Yu. Panova, D. A. Zakgeima, A. S. Bakhvalovb, M. A. Odnoblyudova, A. E. Romanova, V. E. Bugrova a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b AO Nauchnye Pribory, St. Petersburg
Abstract:
The aluminum distribution in the surface layer of an (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$ crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the ($h$00) plane system of the crystal and is related to a distance from the seeding zone.
Keywords:
X-ray fluorescence, X-ray structural mapping, Czochralski method, wide band gap semiconductors.
Received: 12.10.2020 Revised: 17.11.2020 Accepted: 21.11.2020
Citation:
D. A. Bauman, L. A. Pyankova, A. V. Kremleva, V. A. Spiridonov, D. Yu. Panov, D. A. Zakgeim, A. S. Bakhvalov, M. A. Odnoblyudov, A. E. Romanov, V. E. Bugrov, “Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 19–22; Tech. Phys. Lett., 47:3 (2021), 218–221
Linking options:
https://www.mathnet.ru/eng/pjtf4839 https://www.mathnet.ru/eng/pjtf/v47/i5/p19
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