Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals

The aluminum distribution in the surface layer of an (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$ crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the ($h$00) plane system of the crystal and is related to a distance from the seeding zone.