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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 997–1000
(Mi phts6427)
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This article is cited in 5 scientific papers (total in 5 papers)
Manufacturing, processing, testing of materials and structures
Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
V. I. Nikolaevabc, A. I. Pechnikovab, S. I. Stepanovbd, Sh. Sh. Sharofidinovbc, A. A. Golovatenkoabc, I. P. Nikitinac, A. N. Smirnovc, V. E. Bugrovb, A. E. Romanovbc, P. N. Brunkovbc, D. A. Kirilenkobc a Perfect Crystals LLC, St. Petersburg, 194064, Russia
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ioffe Institute, St. Petersburg
d St. Petersburg Polytechnic University
Abstract:
The method of chloride epitaxy is employed to grow $\beta$-Ga$_{2}$O$_{3}$ epitaxial layers on a $c$-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is ($\bar2$01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60$^\circ$. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.
Received: 16.12.2015 Accepted: 23.12.2015
Citation:
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000; Semiconductors, 50:7 (2016), 980–983
Linking options:
https://www.mathnet.ru/eng/phts6427 https://www.mathnet.ru/eng/phts/v50/i7/p997
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