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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductor physics
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
K. J. Mynbaevab, N. L. Bazhenova, A. A. Semakovaab, M. P. Mikhailovaa, N. D. Stoyanovc, S. S. Kizhaevc, S. S. Molchanovc, A. P. Astakhovac, A. V. Chernyaevac, H. Lipsanenbd, V. E. Bugrovb a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Microsensor Technology, St. Petersburg
d Aalto University, Aalto, Finland
Abstract:
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range $T$ = 4.2–300 K. At low temperatures ($T$ = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 $\mu$m. The emission becomes spontaneous at $T>$ 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.
Received: 27.04.2016 Accepted: 08.06.2016
Citation:
K. J. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bugrov, “Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252; Semiconductors, 51:2 (2017), 239–244
Linking options:
https://www.mathnet.ru/eng/phts6241 https://www.mathnet.ru/eng/phts/v51/i2/p247
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