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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 624–627 (Mi phts6462)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

A. Yu. Egorovabc, L. Ya. Karachinskyabc, I. I. Novikovbac, A. V. Babichevacb, V. N. Nevedomskiya, V. E. Bugrovb

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Connector Optics LLC, St. Petersburg
Full-text PDF (996 kB) Citations (2)
Abstract: It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.
Keywords: GaAs, Pump Power, Radiative Recombination, Transmission Electron Micro, Distribute Bragg Reflector.
Received: 10.11.2015
Accepted: 16.11.2015
English version:
Semiconductors, 2016, Volume 50, Issue 5, Pages 612–615
DOI: https://doi.org/10.1134/S1063782616050079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy, V. E. Bugrov, “Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 624–627; Semiconductors, 50:5 (2016), 612–615
Citation in format AMSBIB
\Bibitem{EgoKarNov16}
\by A.~Yu.~Egorov, L.~Ya.~Karachinsky, I.~I.~Novikov, A.~V.~Babichev, V.~N.~Nevedomskiy, V.~E.~Bugrov
\paper Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250--1400-nm spectral range
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 5
\pages 624--627
\mathnet{http://mi.mathnet.ru/phts6462}
\elib{https://elibrary.ru/item.asp?id=27368884}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 5
\pages 612--615
\crossref{https://doi.org/10.1134/S1063782616050079}
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  • https://www.mathnet.ru/eng/phts/v50/i5/p624
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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