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Publications in Math-Net.Ru |
Citations |
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2023 |
1. |
E. V. Skorokhodov, D. A. Tatarskiy, R. V. Gorev, V. L. Mironov, A. A. Fraerman, “Gyrotropic oscillations of magnetic vortices in two interacting ferromagnetic disks”, Pis'ma v Zh. Èksper. Teoret. Fiz., 117:2 (2023), 165–170 ; JETP Letters, 117:2 (2023), 164–169 |
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2021 |
2. |
D. V. Masterov, S. A. Pavlov, A. E. Parafin, E. V. Skorokhodov, “Investigation of the parameters of superconducting and insulating elements of structures obtained on YBCO films by master mask with decreasing their size”, Fizika Tverdogo Tela, 63:9 (2021), 1218–1222 ; Phys. Solid State, 63:10 (2021), 1480–1484 |
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3. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772 |
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2020 |
4. |
D. V. Masterov, S. A. Pavlov, A. E. Parafin, E. V. Skorokhodov, “On a possibility to fabricate YBCO bridges with the perfect surface, critical temperature over 88 K and critical current density up to 5 $\times$ 10$^6$ a/cm$^2$”, Fizika Tverdogo Tela, 62:9 (2020), 1398–1402 ; Phys. Solid State, 62:9 (2020), 1562–1566 |
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5. |
R. V. Gorev, E. V. Skorokhodov, V. L. Mironov, “Modeling of forced oscillations of magnetization in a system of three ferromagnetic nanodisks”, Fizika Tverdogo Tela, 62:9 (2020), 1349–1353 ; Phys. Solid State, 62:9 (2020), 1513–1517 |
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6. |
A. N. Pligovka, P. A. Yunin, A. V. Hoha, S. A. Korolev, G. G. Gorokh, E. V. Skorokhodov, “Morphology and structure of defected niobium oxide nonuniform arrays formed by anodizing bilayer Al/Nb systems”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1854–1859 ; Tech. Phys., 65:11 (2020), 1771–1776 |
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7. |
V. L. Mironov, E. V. Skorokhodov, D. A. Tatarskii, I. Yu. Pashen'kin, “Magnetic resonance force spectroscopy of magnetic vortex oscillations”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1821–1824 ; Tech. Phys., 65:11 (2020), 1740–1743 |
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8. |
Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961 ; Semiconductors, 54:9 (2020), 1147–1149 |
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2019 |
9. |
O. L. Ermolaeva, N. S. Gusev, E. V. Skorokhodov, V. V. Rogov, O. G. Udalov, “Magnetic force microscopy study of the effect of stresses on the magnetic state of Ni particles”, Fizika Tverdogo Tela, 61:9 (2019), 1623–1627 ; Phys. Solid State, 61:9 (2019), 1572–1576 |
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10. |
R. V. Gorev, E. V. Skorokhodov, V. L. Mironov, “Simulation of the interaction of a magnetic resonance force microscope probe with a ferromagnetic sample”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1646–1649 ; Tech. Phys., 64:11 (2019), 1556–1559 |
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11. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, P. A. Bushuikin, A. N. Yablonskii, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorokhodov, Z. F. Krasil'nik, “Emission properties of heavily doped epitaxial indium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400 ; Semiconductors, 53:10 (2019), 1357–1362 |
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12. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, A. I. Mashin, E. E. Morozova, A. V. Nezhdanov, A. V. Novikov, E. V. Skorokhodov, D. V. Shengurov, A. N. Yablonskii, “Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1360–1365 ; Semiconductors, 53:10 (2019), 1324–1328 |
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13. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314 ; Semiconductors, 53:10 (2019), 1279–1281 |
14. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin, “Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232 ; Semiconductors, 53:9 (2019), 1203–1206 |
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2018 |
15. |
E. V. Skorokhodov, M. V. Sapozhnikov, R. V. Gorev, A. P. Volodin, V. L. Mironov, “Influence of the magnetic moment of the probe of a magnetic resonance force microscope on the spin-wave resonance spectra”, Fizika Tverdogo Tela, 60:11 (2018), 2213–2218 ; Phys. Solid State, 60:11 (2018), 2254–2258 |
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16. |
D. V. Masterov, S. A. Pavlov, A. E. Parafin, E. V. Skorokhodov, P. A. Yunin, “A study of the isolation region of planar superconducting YBCO structures formed by the master mask method”, Fizika Tverdogo Tela, 60:11 (2018), 2100–2104 |
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17. |
M. V. Sapozhnikov, O. V. Ermolaeva, E. V. Skorokhodov, N. S. Gusev, M. N. Drozdov, “Magnetic skyrmions in thickness-modulated films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018), 378–382 ; JETP Letters, 107:6 (2018), 364–368 |
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18. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin, “Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1362–1365 ; Semiconductors, 52:11 (2018), 1473–1476 |
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19. |
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336 ; Semiconductors, 52:11 (2018), 1442–1447 |
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20. |
E. V. Skorokhodov, M. V. Sapozhnikov, V. L. Mironov, “Magnetic resonance force microscopy of a permalloy microstrip array”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018), 49–56 ; Tech. Phys. Lett., 44:3 (2018), 203–206 |
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2017 |
21. |
N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, N. Usami, “Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1599–1604 ; Semiconductors, 51:12 (2017), 1542–1546 |
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22. |
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598 ; Semiconductors, 51:12 (2017), 1537–1541 |
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2016 |
23. |
O. L. Ermolaeva, E. V. Skorokhodov, V. L. Mironov, “Domain wall pinning controlled by the magnetic field of four nanoparticles in a ferromagnetic nanowire”, Fizika Tverdogo Tela, 58:11 (2016), 2145–2148 ; Phys. Solid State, 58:11 (2016), 2223–2227 |
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24. |
R. V. Gorev, E. V. Skorokhodov, V. L. Mironov, “Ferromagnetic resonance in interacting magnetic microstrips”, Fizika Tverdogo Tela, 58:11 (2016), 2135–2139 ; Phys. Solid State, 58:11 (2016), 2212–2217 |
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25. |
D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536 ; Semiconductors, 50:11 (2016), 1511–1514 |
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26. |
P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskii, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov, Z. F. Krasil'nik, “On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1133–1137 ; Semiconductors, 50:8 (2016), 1112–1116 |
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27. |
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268 ; Semiconductors, 50:2 (2016), 261–265 |
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