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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1532–1536
(Mi phts6320)
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This article is cited in 2 scientific papers (total in 2 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
D. N. Lobanovab, A. V. Novikovab, P. A. Yuninb, E. V. Skorokhodovb, M. V. Shaleevb, M. N. Drozdovb, O. I. Khrykinb, O. A. Buzanovc, V. V. Alenkovc, P. I. Folomind, A. B. Gritsenkod a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c OJSC "Fomos Materials", Moscow
d National University of Science and Technology «MISIS», Moscow
Abstract:
In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La$_{3}$Ga$_{5}$SiO$_{14}$ (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about $\sim$520$^\circ$C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion from langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition ($\sim$700$^\circ$C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of $\sim$10$^{11}$ cm$^{-2}$ and low surface roughness ($<$ 2 nm) is obtained.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536; Semiconductors, 50:11 (2016), 1511–1514
Linking options:
https://www.mathnet.ru/eng/phts6320 https://www.mathnet.ru/eng/phts/v50/i11/p1532
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