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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 264–268
(Mi phts6550)
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This article is cited in 6 scientific papers (total in 6 papers)
Manufacturing, processing, testing of materials and structures
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
D. N. Lobanovab, A. V. Novikovab, B. A. Andreevab, P. A. Bushuikina, P. A. Yunina, E. V. Skorokhodova, L. V. Krasil’nikovaba a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Abstract:
The results of investigations of the effect of the ratios of fluxes of the Group-III and -V elements on the structural and optical properties of an InN film deposited by plasma-assisted molecular-beam epitaxy (MBE) are presented. It is shown that the InN layer consists of free-standing nanocolumns at a flux ratio of III/V $<$ 0.6. InN growth becomes two-dimensional (2D) in the ratio range 0.6 $<$ III/V $<$ 0.9; however, the InN layer has a nanoporous structure. Upon passage to metal-rich conditions of growth (III/V $\sim$1.1), the InN layer becomes continuous. The passage from 3D to 2D growth is accompanied by an increase in the threading-dislocation density. It results in a decrease in the photoluminescence (PL) intensity of InN at room temperature. The electron concentration in the InN layers amounts to $\sim$5 $\cdot$10$^{18}$ cm$^{-3}$, which results in a shift of the PL-signal peak to the wavelength region of 1.73–1.8 $\mu$m and to a shift of the absorption edge to the region of $\sim$1.65 $\mu$m.
Keywords:
Flux Ratio, Aluminum Nitride, Scanning Electron Micro, Nitrogen Flux, Smooth Surface Morphology.
Received: 28.05.2015 Accepted: 05.06.2015
Citation:
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268; Semiconductors, 50:2 (2016), 261–265
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https://www.mathnet.ru/eng/phts6550 https://www.mathnet.ru/eng/phts/v50/i2/p264
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