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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 264–268 (Mi phts6550)  

This article is cited in 6 scientific papers (total in 6 papers)

Manufacturing, processing, testing of materials and structures

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements

D. N. Lobanovab, A. V. Novikovab, B. A. Andreevab, P. A. Bushuikina, P. A. Yunina, E. V. Skorokhodova, L. V. Krasil’nikovaba

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (359 kB) Citations (6)
Abstract: The results of investigations of the effect of the ratios of fluxes of the Group-III and -V elements on the structural and optical properties of an InN film deposited by plasma-assisted molecular-beam epitaxy (MBE) are presented. It is shown that the InN layer consists of free-standing nanocolumns at a flux ratio of III/V $<$ 0.6. InN growth becomes two-dimensional (2D) in the ratio range 0.6 $<$ III/V $<$ 0.9; however, the InN layer has a nanoporous structure. Upon passage to metal-rich conditions of growth (III/V $\sim$1.1), the InN layer becomes continuous. The passage from 3D to 2D growth is accompanied by an increase in the threading-dislocation density. It results in a decrease in the photoluminescence (PL) intensity of InN at room temperature. The electron concentration in the InN layers amounts to $\sim$5 $\cdot$10$^{18}$ cm$^{-3}$, which results in a shift of the PL-signal peak to the wavelength region of 1.73–1.8 $\mu$m and to a shift of the absorption edge to the region of $\sim$1.65 $\mu$m.
Keywords: Flux Ratio, Aluminum Nitride, Scanning Electron Micro, Nitrogen Flux, Smooth Surface Morphology.
Received: 28.05.2015
Accepted: 05.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 261–265
DOI: https://doi.org/10.1134/S1063782616020159
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268; Semiconductors, 50:2 (2016), 261–265
Citation in format AMSBIB
\Bibitem{LobNovAnd16}
\by D.~N.~Lobanov, A.~V.~Novikov, B.~A.~Andreev, P.~A.~Bushuikin, P.~A.~Yunin, E.~V.~Skorokhodov, L.~V.~Krasil’nikova
\paper Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 264--268
\mathnet{http://mi.mathnet.ru/phts6550}
\elib{https://elibrary.ru/item.asp?id=25668128}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 261--265
\crossref{https://doi.org/10.1134/S1063782616020159}
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  • https://www.mathnet.ru/eng/phts/v50/i2/p264
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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