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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
Olga V. Proskurina, Ksenia I. Babich, Kirill D. Martinson, Sofia M. Tikhanova, Vladimir N. Nevedomskiy, Valentin G. Semenov, Rufat Sh. Abiev, Victor V. Gusarov, “Magnetic and photocatalytic properties of BiFeO$_3$ nanoparticles formed during the heat treatment of hydroxides coprecipitated in a microreactor with intense swirling flows”, Nanosystems: Physics, Chemistry, Mathematics, 15:3 (2024), 369–379  |
| 2. |
Makariy S. Lomakin, Olga V. Proskurina, Aleksandr A. Levin, Vladimir N. Nevedomskiy, “Pyrochlore phase in the Bi$_2$O$_3$–Fe$_2$O$_3$–WO$_3$–(H$_2$O) system: its stability field in the low-temperature region of the phase diagram and thermal stability”, Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024), 240–254 |
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2023 |
| 3. |
Maria O. Enikeeva, Olga V. Proskurina, Evgeny Yu. Gerasimov, Vladimir N. Nevedomskiy, Victor V. Gusarov, “Synthesis under hydrothermal conditions and structural transformations of nanocrystals in the LaPO$_4$–YPO$_4$–(H$_2$O) system”, Nanosystems: Physics, Chemistry, Mathematics, 14:6 (2023), 660–671  |
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| 4. |
Ivan V. Pleshakov, Vyacheslav A. Ryzhov, Yaroslav Yu. Marchenko, Arseniy A. Alekseev, Elina K. Karseeva, Vladimir N. Nevedomskiy, Andrey V. Prokof'ev, “Agglomeration of magnetite nanoparticles with citrate shell in an aqueous magnetic fluid”, Nanosystems: Physics, Chemistry, Mathematics, 14:3 (2023), 334–341 |
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| 5. |
Olga V. Proskurina, Rufat Sh. Abiev, Vladimir N. Nevedomskiy, “Influence of using different types of microreactors on the formation of nanocrystalline BiFeO$_3$”, Nanosystems: Physics, Chemistry, Mathematics, 14:1 (2023), 120–126 |
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2021 |
| 6. |
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuz'menkov, A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, V. E. Bugrov, “Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017 |
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2020 |
| 7. |
A. G. Gladyshev, A. V. Babichev, V. V. Andryushkin, D. V. Denisov, V. N. Nevedomskiy, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2139–2142 ; Tech. Phys., 65:12 (2020), 2047–2050 |
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| 8. |
O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskiy, N. A. Bert, A. V. Ershov, “Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1112–1116 ; Semiconductors, 54:10 (2020), 1315–1319 |
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| 9. |
S. A. Blokhin, V. N. Nevedomskiy, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, V. M. Ustinov, “1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1088–1096 ; Semiconductors, 54:10 (2020), 1276–1283 |
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| 10. |
R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskiy, M. Z. Shvarts, N. A. Kalyuzhnyy, “Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1079–1087 ; Semiconductors, 54:10 (2020), 1267–1275 |
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| 11. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova, “Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765 ; Semiconductors, 54:8 (2020), 900–911 |
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| 12. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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| 13. |
S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30 ; Tech. Phys. Lett., 46:11 (2020), 1128–1131 |
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| 14. |
E. V. Astrova, A. V. Parfeneva, A. M. Rumyantsev, V. P. Ulin, M. V. Baidakova, V. N. Nevedomskiy, A. V. Nashchekin, “The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 14–18 ; Tech. Phys. Lett., 46:2 (2020), 114–117 |
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2019 |
| 15. |
R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1592–1597 ; Tech. Phys., 64:10 (2019), 1509–1514 |
| 16. |
M. V. Baidakova, N. A. Germanov, S. N. Golyandin, M. E. Kompan, S. V. Mochalov, A. V. Nashchekin, V. N. Nevedomskiy, S. A. Pul'nev, M. K. Rabchinskii, V. P. Ulin, N. V. Ulin, “Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 938–947 ; Tech. Phys., 64:6 (2019), 884–892 |
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| 17. |
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi, V. N. Nevedomskiy, L. Ya. Karachinsky, I. I. Novikov, A. N. Sofronov, A. Yu. Egorov, “Spontaneous emission and lasing of a two-wavelength quantum-cascade laser”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 365–369 ; Semiconductors, 53:3 (2019), 345–349 |
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| 18. |
R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 273–276 ; Semiconductors, 53:2 (2019), 260–263 |
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| 19. |
A. V. Babichev, V. V. Dyudelev, A. G. Gladyshev, D. A. Mikhailov, A. S. Kurochkin, E. S. Kolodeznyi, V. E. Bugrov, V. N. Nevedomskiy, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 48–51 ; Tech. Phys. Lett., 45:7 (2019), 735–738 |
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| 20. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, Yu. M. Shernyakov, G. O. Kornyshov, A. A. Serin, A. S. Payusov, V. N. Nevedomskiy, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, “Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 42–45 ; Tech. Phys. Lett., 45:2 (2019), 163–166 |
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2018 |
| 21. |
A. V. Babichev, G. A. Gusev, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, A. A. Usikova, Yu. M. Zadiranov, N. D. Il'inskaya, V. N. Nevedomskiy, V. V. Dyudelev, G. S. Sokolovskii, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Lasing in 9.6-$\mu$m quantum cascade lasers”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1559–1563 ; Tech. Phys., 63:10 (2018), 1511–1515 |
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| 22. |
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, V. N. Nevedomskiy, L. A. Sokura, S. S. Ruvimov, M. Z. Shvarts, A. E. Zhukov, “Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1131–1136 ; Semiconductors, 52:10 (2018), 1249–1254 |
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| 23. |
A. V. Babichev, A. S. Kurochkin, E. S. Kolodeznyi, A. V. Filimonov, A. A. Usikova, V. N. Nevedomskiy, A. G. Gladyshev, D. V. Denisov, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 597–602 ; Semiconductors, 52:6 (2018), 745–749 |
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| 24. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Ruvimov, V. N. Nevedomskiy, M. V. Maksimov, A. E. Zhukov, “Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 57–62 ; Semiconductors, 52:1 (2018), 55–58 |
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| 25. |
I. M. Gadzhiev, M. S. Buyalo, A. S. Payusov, A. E. Gubenko, S. S. Mikhrin, V. N. Nevedomskiy, E. L. Portnoĭ, “Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 30–39 ; Tech. Phys. Lett., 44:11 (2018), 965–968 |
| 26. |
N. A. Maleev, M. A. Bobrov, A. G. Kuz'menkov, A. P. Vasil'ev, M. M. Kulagina, S. N. Maleev, S. A. Blokhin, V. N. Nevedomskiy, V. M. Ustinov, “Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 16–23 ; Tech. Phys. Lett., 44:10 (2018), 862–864 |
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2017 |
| 27. |
N. A. Maleev, V. A. Belyakov, A. P. Vasil'ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuz'menkov, V. N. Nevedomskiy, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, V. M. Ustinov, “Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1484–1488 ; Semiconductors, 51:11 (2017), 1431–1434 |
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| 28. |
K. D. Moiseev, V. N. Nevedomskiy, Yu. Kudriavtsev, A. Escobosa-Echavarria, M. Lopez-Lopez, “On the delta-type doping of GaAs-based heterostructures with manganese compounds”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1189–1195 ; Semiconductors, 51:9 (2017), 1141–1147 |
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| 29. |
L. A. Sokura, Ya. A. Parkhomenko, K. D. Moiseev, V. N. Nevedomskiy, N. A. Bert, “InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1146–1150 ; Semiconductors, 51:8 (2017), 1101–1105 |
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| 30. |
S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, V. N. Nevedomskiy, A. E. Zhukov, “InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 704–710 ; Semiconductors, 51:5 (2017), 672–678 |
| 31. |
N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280 ; Semiconductors, 51:2 (2017), 267–271 |
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| 32. |
A. V. Babichev, A. G. Gladyshev, A. V. Filimonov, V. N. Nevedomskiy, A. S. Kurochkin, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, A. Bousseksou, A. Yu. Egorov, “Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017), 64–71 ; Tech. Phys. Lett., 43:7 (2017), 666–669 |
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2016 |
| 33. |
A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy, V. E. Bugrov, “Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 624–627 ; Semiconductors, 50:5 (2016), 612–615 |
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| 34. |
S. A. Blokhin, N. V. Kryzhanovskaya, È. I. Moiseev, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, V. N. Nevedomskiy, E. V. Nikitina, N. A. Maleev, V. M. Ustinov, “Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79 ; Tech. Phys. Lett., 42:10 (2016), 1009–1012 |
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| 35. |
R. V. Levin, V. N. Nevedomskiy, B. V. Pushnii, N. A. Bert, M. N. Mizerov, “InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 79–84 ; Tech. Phys. Lett., 42:1 (2016), 96–98 |
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2015 |
| 36. |
V. I. Popkov, O. V. Almjasheva, V. N. Nevedomskiy, V. V. Sokolov, V. V. Gusarov, “Crystallization behavior and morphological features of YFeO$_3$ nanocrystallites obtainedby glycine-nitrate combustion”, Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015), 866–874  |
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2011 |
| 37. |
I. A. Nyapshaev, B. O. Shcherbin, A. V. Ankudinov, Yu. A. Kumzerov, V. N. Nevedomskiy, A. A. Krasilin, O. V. Almjasheva, V. V. Gusarov, “Mechanical properties of nanoscrolls based on Mg$_3$Si$_2$O$_5$(OH)$_4$”, Nanosystems: Physics, Chemistry, Mathematics, 2:2 (2011), 48–57 |
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