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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 12, Pages 2139–2142
DOI: https://doi.org/10.21883/JTF.2020.12.50133.129-20 (Mi jtf5137) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physics of nanostructures

Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group

A. G. Gladysheva, A. V. Babicheva, V. V. Andryushkina, D. V. Denisovb, V. N. Nevedomskiyc, E. S. Kolodeznyia, I. I. Novikova, L. Ya. Karachinskya, A. Yu. Egorovd

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Saint Petersburg Electrotechnical University "LETI"
c Center for Collective Use "Materials Science and Diagnostics in Advanced Technologies", St. Petersburg
d Connector Optics LLC, St. Petersburg
Full-text PDF (609 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2020.12.50133.129-20
Abstract: A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the replacement of phosphorus with arsenic results in formation of three-dimensional islands in the thin InGaP layer. At room temperature, these islands emit light in the spectral range of 0.95 – 0.97 $\mu$m. The estimated density of the islands is 1.3 $\times$ 10$^{10}$ cm$^{-2}$.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 2019-1442
This work was supported by the Ministry of Science and Higher Education of the Russian Federation, research project no. 2019-1442.
Received: 13.04.2020
Revised: 12.05.2020
Accepted: 13.05.2020
English version:
Technical Physics, 2020, Volume 65, Issue 12, Pages 2047–2050
DOI: https://doi.org/10.1134/S1063784220120099
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Gladyshev, A. V. Babichev, V. V. Andryushkin, D. V. Denisov, V. N. Nevedomskiy, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2139–2142; Tech. Phys., 65:12 (2020), 2047–2050
Citation in format AMSBIB
\Bibitem{GlaBabAnd20}
\by A.~G.~Gladyshev, A.~V.~Babichev, V.~V.~Andryushkin, D.~V.~Denisov, V.~N.~Nevedomskiy, E.~S.~Kolodeznyi, I.~I.~Novikov, L.~Ya.~Karachinsky, A.~Yu.~Egorov
\paper Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 12
\pages 2139--2142
\mathnet{http://mi.mathnet.ru/jtf5137}
\crossref{https://doi.org/10.21883/JTF.2020.12.50133.129-20}
\elib{https://elibrary.ru/item.asp?id=44367668}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 12
\pages 2047--2050
\crossref{https://doi.org/10.1134/S1063784220120099}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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