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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 273–276
DOI: https://doi.org/10.21883/FTP.2019.02.47112.8946 (Mi phts5600) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method

R. V. Levina, V. N. Nevedomskiya, N. L. Bazhenova, G. G. Zegryaa, B. V. Pushniia, M. N. Mizerovb

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Full-text PDF (437 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.02.47112.8946
Abstract: The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5.0 $\mu$m (0.25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation RFMEFI62117X0018
Received: 03.07.2018
Revised: 16.07.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 260–263
DOI: https://doi.org/10.1134/S1063782619020155
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 273–276; Semiconductors, 53:2 (2019), 260–263
Citation in format AMSBIB
\Bibitem{LevNevBaz19}
\by R.~V.~Levin, V.~N.~Nevedomskiy, N.~L.~Bazhenov, G.~G.~Zegrya, B.~V.~Pushnii, M.~N.~Mizerov
\paper On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 273--276
\mathnet{http://mi.mathnet.ru/phts5600}
\crossref{https://doi.org/10.21883/FTP.2019.02.47112.8946}
\elib{https://elibrary.ru/item.asp?id=37476933}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 260--263
\crossref{https://doi.org/10.1134/S1063782619020155}
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  • https://www.mathnet.ru/eng/phts/v53/i2/p273
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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