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This article is cited in 4 scientific papers (total in 4 papers)
Manufacturing, processing, testing of materials and structures
Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova Ioffe Institute, St. Petersburg
Abstract:
A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising the annealing temperature of mixtures of SiO and CF$_x$ powders in a quasi-closed volume to 1000$^\circ$C and higher leads to the formation of whisker-like SiC nanocrystals. It is found that, in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapor with carbon monoxide, the previously undescribed interaction of CO with gas-phase silicon difluoride SiF$_2$ takes part in their formation. At temperatures below 1200$^\circ$C, this reaction is dominant and makes the most pronounced contribution to the yield of SiC nanowires.
Keywords:
the formation of nanowires (whiskers) of silicon carbide, silicon monoxide, fluorocarbon, gas-phase silicon difluoride.
Received: 06.04.2020 Revised: 12.04.2020 Accepted: 12.04.2020
Citation:
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova, “Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765; Semiconductors, 54:8 (2020), 900–911
Linking options:
https://www.mathnet.ru/eng/phts5192 https://www.mathnet.ru/eng/phts/v54/i8/p753
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