Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation

A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising the annealing temperature of mixtures of SiO and CF$_x$ powders in a quasi-closed volume to 1000$^\circ$C and higher leads to the formation of whisker-like SiC nanocrystals. It is found that, in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapor with carbon monoxide, the previously undescribed interaction of CO with gas-phase silicon difluoride SiF$_2$ takes part in their formation. At temperatures below 1200$^\circ$C, this reaction is dominant and makes the most pronounced contribution to the yield of SiC nanowires.