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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1484–1488
DOI: https://doi.org/10.21883/FTP.2017.11.45095.09 (Mi phts5992) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

N. A. Maleeva, V. A. Belyakovb, A. P. Vasil'evc, M. A. Bobrova, S. A. Blokhina, M. M. Kulaginaa, A. G. Kuz'menkovc, V. N. Nevedomskiya, Yu. A. Gusevaa, S. N. Maleeva, I. V. Ladenkovb, E. L. Fefelovab, A. G. Fefelovb, V. M. Ustinovdc

a Ioffe Institute, St. Petersburg
b NPP "Salyut", Nizhny Novgorod, Russia
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d Peter the Great St. Petersburg Polytechnic University
Full-text PDF (556 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.11.45095.09
Abstract: The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1431–1434
DOI: https://doi.org/10.1134/S1063782617110185
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Maleev, V. A. Belyakov, A. P. Vasil'ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuz'menkov, V. N. Nevedomskiy, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, V. M. Ustinov, “Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1484–1488; Semiconductors, 51:11 (2017), 1431–1434
Citation in format AMSBIB
\Bibitem{MalBelVas17}
\by N.~A.~Maleev, V.~A.~Belyakov, A.~P.~Vasil'ev, M.~A.~Bobrov, S.~A.~Blokhin, M.~M.~Kulagina, A.~G.~Kuz'menkov, V.~N.~Nevedomskiy, Yu.~A.~Guseva, S.~N.~Maleev, I.~V.~Ladenkov, E.~L.~Fefelova, A.~G.~Fefelov, V.~M.~Ustinov
\paper Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1484--1488
\mathnet{http://mi.mathnet.ru/phts5992}
\crossref{https://doi.org/10.21883/FTP.2017.11.45095.09}
\elib{https://elibrary.ru/item.asp?id=30546385}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1431--1434
\crossref{https://doi.org/10.1134/S1063782617110185}
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    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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