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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin, D. V. Shurtakova, E. N. Mokhov, O. P. Kazarova, M. R. Gafurov, “Оптическая спиновая инициализация азот-вакансионных центров в изотопно-обогащенном ($^{28}$Si) кристалле 6H-SiC для квантовых технологий”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024), 587–592  |
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2023 |
| 2. |
R. A. Babunts, Yu. A. Uspenskaya, A. P. Bundakova, G. V. Mamin, E. N. Mokhov, P. G. Baranov, “Identification of optically active quartet spin centers based on a Si vacancy in SiC promising for quantum technologies”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:9 (2023), 639–648 ; JETP Letters, 118:9 (2023), 629–636 |
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2022 |
| 3. |
R. A. Babunts, Yu. A. Uspenskaya, A. S. Gurin, A. P. Bundakova, G. V. Mamin, A. N. Anisimov, E. N. Mokhov, P. G. Baranov, “Manifestations of electron-nuclear interactions in the high-frequency ENDOR/ODMR spectra for triplet Si-C divacancies in $^{13}$C-enriched SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:7 (2022), 481–489 ; JETP Letters, 116:7 (2022), 485–492 |
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2021 |
| 4. |
R. A. Babunts, A. N. Anisimov, I. D. Breev, A. S. Gurin, A. P. Bundakova, M. V. Muzafarova, E. N. Mokhov, P. G. Baranov, “Fully optical detection of hyperfine electron–nuclear interactions in spin centers in 6h-sic crystals with a modified 13c isotope content”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:8 (2021), 533–540 ; JETP Letters, 114:8 (2021), 463–469  |
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| 5. |
I. D. Breev, K. V. Likhachev, V. V. Yakovleva, I. P. Veishtort, A. M. Skomorokhov, S. S. Nagalyuk, E. N. Mokhov, G. V. Astakhov, P. G. Baranov, A. N. Anisimov, “Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021), 323–327 ; JETP Letters, 114:5 (2021), 274–278  |
3
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| 6. |
S. S. Nagalyuk, E. N. Mokhov, O. P. Kazarova, B. Ya. Ber, A. A. Anisimov, I. D. Breev, “Origin of green coloration in AlN crystals grown on SiC seeds”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 513–517  ; Semiconductors, 55:6 (2021), 546–550 |
| 7. |
I. D. Breev, V. V. Yakovleva, O. S. Kudryavtsev, P. G. Baranov, E. N. Mokhov, A. N. Anisimov, “On the Raman scattering, infrared absorption, and luminescence spectroscopy of aluminum nitride doped with beryllium”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 251–255 ; Semiconductors, 55:3 (2021), 328–332 |
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2020 |
| 8. |
A. N. Anisimov, R. A. Babunts, I. D. Breev, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 813–819 ; JETP Letters, 112:12 (2020), 774–779 |
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| 9. |
E. N. Mokhov, M. K. Rabchinskii, S. S. Nagalyuk, M. R. Gafurov, O. P. Kazarova, “Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 224–227 ; Semiconductors, 54:3 (2020), 278–281 |
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2019 |
| 10. |
E. N. Mokhov, A. A. Vol'fson, O. P. Kazarova, “Growing bulk aluminum nitride and gallium nitride crystals by the sublimation sandwich method”, Fizika Tverdogo Tela, 61:12 (2019), 2298–2302 ; Phys. Solid State, 61:12 (2019), 2286–2290 |
1
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| 11. |
I. D. Breev, A. N. Anisimov, A. A. Vol'fson, O. P. Kazarova, E. N. Mokhov, “Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1593–1596 ; Semiconductors, 53:11 (2019), 1558–1561 |
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| 12. |
A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848 ; Phys. Usp., 62:8 (2019), 754–794 |
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2018 |
| 13. |
I. V. Il'in, Yu. A. Uspenskaya, D. D. Kramushchenko, M. V. Muzafarova, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies”, Fizika Tverdogo Tela, 60:4 (2018), 641–659 ; Phys. Solid State, 60:4 (2018), 644–662 |
3
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| 14. |
A. N. Anisimov, A. A. Vol'fson, E. N. Mokhov, “Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1104–1106 ; Semiconductors, 52:9 (2018), 1225–1227 |
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2017 |
| 15. |
E. N. Mokhov, O. P. Kazarova, V. A. Soltamov, S. S. Nagalyuk, “Influence of neutron irradiation on etching of SiC in KOH”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1104–1106 ; Tech. Phys., 62:7 (2017), 1119–1121 |
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2016 |
| 16. |
M. V. Muzafarova, I. V. Il'in, A. N. Anisimov, E. N. Mokhov, V. A. Soltamov, P. G. Baranov, “Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice”, Fizika Tverdogo Tela, 58:12 (2016), 2319–2335 ; Phys. Solid State, 58:12 (2016), 2406–2422 |
4
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| 17. |
A. N. Anisimov, R. A. Babunts, S. V. Kidalov, E. N. Mokhov, V. A. Soltamov, P. G. Baranov, “Spin centres in SiC for all-optical nanoscale quantum sensing under ambient conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 83 ; JETP Letters, 104:2 (2016), 82–87 |
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| 18. |
A. N. Anisimov, D. O. Tolmachev, R. A. Babunts, M. V. Muzafarova, A. P. Bundakova, I. V. Il'in, V. A. Soltamov, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov, “An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 22–29 ; Tech. Phys. Lett., 42:6 (2016), 618–621 |
2
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| 19. |
Yu. V. Zhilyaev, V. V. Zelenin, E. N. Mokhov, S. S. Nagalyuk, N. K. Poletaev, A. P. Skvortsov, “Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 91–96 ; Tech. Phys. Lett., 42:2 (2016), 156–159 |
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2005 |
| 20. |
P. G. Baranov, I. V. Il'in, E. N. Mokhov, M. V. Muzafarova, S. B. Orlinskii, J. Shmidt, “EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:7 (2005), 494–497 ; JETP Letters, 82:7 (2005), 441–443 |
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1992 |
| 21. |
A. P. Garshin, E. A. Lavrenova, Yu. A. Vodakov, E. N. Mokhov, “Effect of impurities and inherent defects on the physicomechanical properties of silicon carbide single crystals”, Fizika Tverdogo Tela, 34:9 (1992), 2748–2752 |
| 22. |
E. N. Mokhov, E. D. Gornushkina, V. A. Didik, V. V. Kozlovskii, “Phosphorus diffusion in silicon carbide”, Fizika Tverdogo Tela, 34:6 (1992), 1956–1958 |
| 23. |
Yu. A. Vodakov, A. I. Girka, A. O. Konstantinov, E. N. Mokhov, A. D. Roenkov, S. V. Svirida, V. V. Semenov, V. I. Sokolov, A. V. Shishkin, “Светодиоды на основе карбида кремния, облученного быстрыми
электронами”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1857–1860 |
| 24. |
T. L. Petrenko, V. V. Teslenko, E. N. Mokhov, “ДЭЯР и электронная структура примесных центров бора в $6H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1556–1564 |
| 25. |
R. G. Verenchikova, Yu. A. Vodakov, D. P. Litvin, E. N. Mokhov, A. D. Roenkov, V. I. Sankin, “Ультрафиолетовые карбид-кремниевые фотоприемники”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1008–1014 |
| 26. |
Yu. A. Vodakov, A. A. Vol'fson, G. V. Zaritskii, E. N. Mokhov, A. G. Ostroumov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, V. A. Syralev, V. E. Udaltsov, “Эффективные зеленые светодиоды на карбиде кремния”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 107–110 |
| 27. |
A. A. Mal'tsev, E. N. Mokhov, “6H SIC BORON-ALLOYED AND NITROGEN-ALLOYED EPITAXIAL LAYERS GROWN BY THE
SUBLIMATION SANDWICH METHOD IN SILICON EXCESS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992), 41–45 |
| 28. |
E. N. Mokhov, V. A. Didik, V. V. Kozlovskii, “О переносе примеси фосфора из сублимирующегося источника SiC
в эпитаксиальный слой”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992), 59–62 |
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1991 |
| 29. |
Yu. A. Vodakov, E. N. Kalabukhova, S. N. Lukin, A. A. Lepneva, E. N. Mokhov, B. D. Shanina, “Epr in the $2$ mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers”, Fizika Tverdogo Tela, 33:11 (1991), 3315–3326 |
| 30. |
V. S. Vavilov, Yu. A. Vodakov, A. I. Ivanov, E. N. Mokhov, A. D. Roenkov, M. V. Chukichev, R. G. Verenchikova, “Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми
электронами”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 762–766 |
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1990 |
| 31. |
A. S. Tregubova, E. N. Mokhov, I. L. Shul'pina, “Motion of surface damage-induced dislocations in $\mathrm{SiC}$”, Fizika Tverdogo Tela, 32:8 (1990), 2311–2315 |
| 32. |
E. N. Kalabukhova, S. N. Lukin, B. D. Shanina, L. V. Artamonov, E. N. Mokhov, “Hopping conduction effects in the ESR spectra of heavily nitrogen-doped $4H\mathrm{SiC}$”, Fizika Tverdogo Tela, 32:3 (1990), 818–825 |
| 33. |
E. N. Kalabukhova, S. N. Lukin, B. D. Shanina, E. N. Mokhov, “Effect of $\mathrm{Ge}$ and excess $\mathrm{Si}$ on the ESR spectrum of nitrogen donor states in $6H\mathrm{SiC}$”, Fizika Tverdogo Tela, 32:3 (1990), 789–795 |
| 34. |
E. N. Mokhov, M. G. Ramm, A. D. Roenkov, M. I. Fedorov, R. G. Verenchikova, “NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION
SANDWICH-METHOD GROWTH IN VACUUM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 33–37 |
| 35. |
Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, R. G. Verenchikova, A. O. Konstantinov, V. G. Oding, “ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 25–30 |
| 36. |
Yu. A. Vodakov, E. N. Mokhov, A. D. Semenov, A. L. Roenkov, V. I. Sokolov, “VIOLET LIGHT DIODES BASED ON 6H/4H-SIC[GA,N] HETEROEPITAXIAL LAYERS
GROWN BY THE SUBLIMATION SANDWICH-METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 19–22 |
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1989 |
| 37. |
E. N. Kalabukhova, N. N. Kabdin, S. N. Lukin, E. N. Mokhov, B. D. Shanina, “ESR spectra of nonequivalent nitrogen sites in $15R$ $\mathrm{SiC}$”, Fizika Tverdogo Tela, 31:3 (1989), 50–59 |
| 38. |
A. I. Girka, V. A. Kuleshin, A. D. Mokrushin, E. N. Mokhov, S. V. Svirida, A. V. Shishkin, “Позитронная диагностика вакансионных дефектов в облученном
электронами карбиде кремния”, Fizika i Tekhnika Poluprovodnikov, 23:12 (1989), 2159–2163 |
| 39. |
A. I. Girka, V. A. Kuleshin, A. D. Mokrushin, E. N. Mokhov, S. V. Svirida, A. V. Shishkin, “Позитронная диагностика дефектов в карбиде кремния, облученном
нейтронами”, Fizika i Tekhnika Poluprovodnikov, 23:7 (1989), 1270–1274 |
| 40. |
A. I. Girka, A. D. Mokrushin, E. N. Mokhov, V. M. Osadchiev, S. V. Svirida, A. V. Shishkin, “OBSERVATION OF PHASE-TRANSFORMATIONS IN MATRIX-ADMIXTURE-VACANCY DEFECTS
SYSTEMS BY THE POSITRON-ANNIHILATION TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 79–83 |
| 41. |
A. I. Ivanov, E. N. Mokhov, V. G. Oding, V. S. Vavilov, Yu. A. Vodakov, M. V. Chukichev, “HIGH-TEMPERATURE LUMINESCENCE IN 6H-SIC IN ALLOYED GA AND N”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 38–41 |
| 42. |
Yu. A. Vodakov, E. N. Mokhov, V. I. Sokolov, V. S. Vavilov, A. I. Ivanov, M. V. Chukichev, “CATHODIC LUMINESCENCE OF SIC-6H ALLOYED BY GA UNDER THE HIGH DEGREE OF
EXCITATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 60–64 |
| 43. |
A. I. Girka, A. Yu. Didyk, A. D. Mokrushin, E. N. Mokhov, S. V. Svirida, A. V. Shishkin, V. G. Shmarovoz, “CLUSTERIZATION OF VACANCIES DURING THERMAL ANNEALING OF SILICON-CARBIDE
IRRADIATED BY HEAVY-IONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989), 24–27 |
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1988 |
| 44. |
R. N. Kyutt, A. A. Lepneva, G. A. Lomakina, E. N. Mokhov, A. S. Tregubova, M. M. Shcheglov, G. F. Yuldashev, “Defect formation under the annealing of neutron-irradiated $\mathrm{SiC}$”, Fizika Tverdogo Tela, 30:9 (1988), 2606–2610 |
| 45. |
E. N. Mokhov, E. E. Goncharov, G. G. Ryabova, “Isoconcentrational boron diffusion in $\mathrm{SiC}$”, Fizika Tverdogo Tela, 30:1 (1988), 248–251 |
| 46. |
A. S. Barash, Yu. A. Vodakov, E. N. Koltsova, A. A. Mal'tsev, E. N. Mokhov, A. D. Roenkov, “PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON
HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988), 2222–2226 |
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1987 |
| 47. |
Yu. A. Vodakov, K. D. Demakov, E. V. Kalinina, E. N. Mokhov, M. G. Ramm, G. F. Kholuyanov, “Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum”, Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1685–1689 |
| 48. |
Yu. A. Vodakov, E. E. Goncharov, G. A. Lomakina, A. A. Mal'tsev, E. N. Mokhov, V. G. Oding, “Peculiarities of High-Temperature Luminescence of Boron-Doped Silicon Carbide Epitaxial Layers”, Fizika i Tekhnika Poluprovodnikov, 21:2 (1987), 207–211 |
| 49. |
E. N. Mokhov, M. G. Ramm, A. D. Roenkov, A. A. Vol'fson, A. S. Tregubova, I. L. Shul'pina, “Origination of structural ruptures in epitaxial layers of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645 |
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1986 |
| 50. |
A. I. Veinger, A. G. Zabrodskii, G. A. Lomakina, E. N. Mokhov, “The paramagnetic and electric properties of the neutron transmutation produced phosphorus impurity in $6H$ – $\mathrm{SiC}$”, Fizika Tverdogo Tela, 28:6 (1986), 1659–1664 |
| 51. |
Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, M. G. Ramm, V. I. Sokolov, “Effect of Growth Conditions on Thermal Stability of Defect Luminescence with D$_1$ Spectrum in Neutron-Irpadiated
$6H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2153–2158 |
| 52. |
Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, V. G. Oding, M. G. Ramm, V. I. Sokolov, “Origination of Defect Luminescence with D$_{1}$ Spectrum in $6H$-SiC under Generation of Excess Carbon Vacancies”, Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1433–1437 |
| 53. |
S. A. Poltinnikov, Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, V. V. Semenov, A. D. Roenkov, “Parametric voltage stabilizer based on silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 261–264 |
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1985 |
| 54. |
E. E. Goncharov, A. G. Zubatov, G. A. Lomakina, E. N. Mokhov, G. G. Ryabova, “Lithium diffusion, solubility and electron-paramagnetic-res in $\mathrm{SiC}$”, Fizika Tverdogo Tela, 27:11 (1985), 3479–3481 |
| 55. |
A. G. Zubatov, I. M. Zaritskii, S. N. Lukin, E. N. Mokhov, V. G. Stepanov, “Electron-paramagnetic-res in $\mathrm{SiC}$ doped with boron”, Fizika Tverdogo Tela, 27:2 (1985), 322–329 |
| 56. |
Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, E. N. Mokhov, A. D. Roenkov, “Collision Ionization in Silicon-Carbide Polytypes”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 814–818 |
| 57. |
N. G. Romanov, V. A. Vetrov, P. G. Baranov, E. N. Mokhov, V. G. Oding, “ODMR in $\alpha-Si\,C$, alloyed by boron”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1168–1172 |
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1984 |
| 58. |
A. I. Veinger, A. A. Lepnev, G. A. Lomakina, E. N. Mokhov, V. I. Sokolov, “Отжиг радиационных дефектов в $n$-SiC ($6H$), обученном
нейтронами”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2014–2019 |
| 59. |
G. A. Lomakina, E. N. Mokhov, “Электрические свойства сильно легированного
$6H\text{-SiC}\langle\text{Al}\rangle$, облученного нейтронами”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1911–1913 |
| 60. |
V. G. Oding, Yu. A. Vodakov, E. V. Kalinina, E. N. Mokhov, K. D. Demakov, V. G. Stolyarova, G. F. Goluyanov, “Cathodoluminescence of SiC Ion-Doped by Aland Ar”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 700–703 |
| 61. |
E. N. Mokhov, E. E. Goncharov, G. G. Ryabova, “Boron Diffusion in $p$-Type Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 49–53 |
| 62. |
Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, E. N. Mokhov, A. D. Roenkov, “CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL
WITH NATURAL SUPER-LATTICE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984), 303–306 |
|
1983 |
| 63. |
G. A. Lomakina, E. N. Mokhov, V. G. Oding, “Прыжковая проводимость в $6H$-SiC, легированном Al”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 115–118 |
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