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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 114, Issue 5, Pages 323–327
DOI: https://doi.org/10.31857/S1234567821170067
(Mi jetpl6501)
 

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC

I. D. Breeva, K. V. Likhachevba, V. V. Yakovlevaa, I. P. Veishtortca, A. M. Skomorokhovca, S. S. Nagalyuka, E. N. Mokhova, G. V. Astakhovda, P. G. Baranova, A. N. Anisimova

a Ioffe Institute, St. Petersburg, 194021 Russia
b ITMO University, St. Petersburg, 197101 Russia
c St. Petersburg State Electrotechnical University LETI, St. Petersburg, 197376 Russia
d Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
Full-text PDF (361 kB) Citations (3)
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Abstract: The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin $3/2$ silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerface of the AlN/4H-SiC structure has been studied. Stresses near the heterointerface have been determined using confocal Raman spectroscopy. The spin–strain coupling constants ${\Xi} = (-0.1 \pm 0.25)$ GHz/strain and ${\Xi'} = (-0.8 \pm 0.1)$ GHz/strain for the V2 center in 4H-SiC have been experimentally determined for the first time using the optically detected magnetic resonance method. The results obtained can be used to control spin states in SiC by means of the controlled piezoelectric strain in AlN and to estimate the fine-structure parameter $D$ of spin centers using Raman scattering. Such an estimate makes it possible to forecast magnetometric parameters of nanosensors based on SiC nanocrystals.
Funding agency Grant number
Russian Foundation for Basic Research 20-52-76010
Ministry of Science and Higher Education of the Russian Federation СП-2179.2021.5
This work was supported by the Russian Foundation for Basic Research, project no. 20-52-76010. A.N. Anisimov acknowledges the support of the Council of the President of the Russian Federation for State Support of Young Scientists and Leading Scientific Schools (scholarship no. SP-2179.2021.5).
Received: 22.07.2021
Revised: 28.07.2021
Accepted: 29.07.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 114, Issue 5, Pages 274–278
DOI: https://doi.org/10.1134/S0021364021170057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Breev, K. V. Likhachev, V. V. Yakovleva, I. P. Veishtort, A. M. Skomorokhov, S. S. Nagalyuk, E. N. Mokhov, G. V. Astakhov, P. G. Baranov, A. N. Anisimov, “Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021), 323–327; JETP Letters, 114:5 (2021), 274–278
Citation in format AMSBIB
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